In this paper, we suggest reverse current issue which can occur when neuromorphic system is implemented using RRAM(Resistive Random Access Memory) as synaptic device. Such issue is solved by adding a diode to synapse. Proposed synaptic device is RRAM ...
In this paper, we suggest reverse current issue which can occur when neuromorphic system is implemented using RRAM(Resistive Random Access Memory) as synaptic device. Such issue is solved by adding a diode to synapse. Proposed synaptic device is RRAM integrated with P-N diode which does not require additional area. 1D1R(1Diode-1RRAM) structure synaptic device is proposed and its I-V characteristics are modeled using SILVACO SmartSpice. We successfully demonstrated simple 3x3 pattern recognition using neuron circuits and 1D1R synaptic devices by solving reverse current issue.