We present a novel method for magnetic anisotropy measurement using membrane-type surface stress sensor (MSS). This sensor has a silicon membrane supported by four beams incorporating piezoresistive paths [1]. We modified the on-chip aluminum intercon...
We present a novel method for magnetic anisotropy measurement using membrane-type surface stress sensor (MSS). This sensor has a silicon membrane supported by four beams incorporating piezoresistive paths [1]. We modified the on-chip aluminum interconnect on the MSS to obtain more magnetic information of the material and used it for torque measurement. Angle-dependent torque measurement of magnetic materials were preformed by rotating the device with respect to the applied magnetic field. Instead of one existing Wheatstone Bridge, we modified the on-chip aluminum interconnect to become two Wheatstone bridge circuits. These variations will allow simultaneous investigation of magnetic responses according to different crystallographic directions in a two-dimensional plane.