Clamping effect on the microwave properties of ferroelectric thin films

다국어 초록 (Multilingual Abstract)

Ferroelectric and paraelectric films deposited on dielectric and semiconductor substrates were studied at the frequency range 0.3-100 GHz and temperature interval 300-700 K in comparison with chemically equivalent bulk materials. A dielectric spectroscopy method helps to trace the change of dielectric polarization and dielectric loss mechanisms when the free-stress volume (bulk) ferroelectric is transformed into a thin planar layer (film) that is stressed by its forced accommodation to a rigid substrate. The change in bulk-film properties could be either favourable or an adverse factor for electronic devices.

목차 (Table of Contents)

• 1. Introduction
• 2. Mechanisms of film clamping
• 3.2 Dielectric spectrum of bulk ferroelectrics
• 3.3 Dielectric spectrum of bulk paraelectrics
• 3.4 Microwave properties of ferroelectric and paraelectric thin films
• 3.5 Bias field influence on paraelectric film dielectric constant
• 4. Discussion and conclusions
• References