Plasma-Enhanced Passivation of a Cu/Ti Bilayer Gate Electrode for an Amorphous Silicon Thin-Film Transistor

다국어 초록 (Multilingual Abstract)

Self-passivated copper as a gate electrode in the form of TiOxNy/Cu/Ti/SiO2 has been obtained
by exposing Cu/Ti/SiO2 to mixed of N2/H2 plasma at a low temperature of 300℃. The use
of the plasma provides an additional surface heating source, allowing the Ti atoms to outdiffuse
to the Cu surface at 300℃ and to react to form a passivation layer on the surface. The H2
plasma transforms the Ti layer into titanium hydride, which effectively inhibits the Cu-Ti reaction
and serves as a diffusion barrier against Cu metallization. The TiNxOy/Cu/Ti/SiO2 multilayer
formed at the low temperature can be used as a gate electrode in thin-film transistor liquid crystal
displays (TFT-LCDs) and exhibits a gate voltage swing of 0.943 V/decade, a threshold voltage of
-1.07 V, a mobility of 0.669 cm2/V-s and a Ion/Ioff ratio of 8.18×106. Consequently, this low-
temperature plasma processing will allow a reliable passivated gate electrode, which can be utilized
in low-temperature amorphous Si thin-film transistor liquid crystal displays, to be formed.

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