박막 자기 저항 헤드용 자기교환 결합 NiFe / TbCo 박막

다국어 초록 (Multilingual Abstract)

Exchange coupled NiFe / TbCo / SiO₂ thin films for magnetoresistive heads were sputter deposited using RF diode sputtering method, and their magnetic characteristics were measured TbCo films were deposited using a composite target, which is composed of Tb chips epoxied on a Co target. NiFe(400 Å) / TbCo(1500 Å) / SiO2(500 Å) films were deposited using a TbCo target having 30 % of Tb area ratio, which showed 25 Oe of the exchange field without substrate bias and 12 Oe with -55 V of substrate bias. The effective in-plane coercivities of the three layer films fabricated with less than -55 V of substrate bias were approximately proportional to the perpendicular coercivities of the TbCo layer only. The films fabricated with a TbCo target of 28 % area ratio showed the same trend. However, the exchange field decreased to 4 Oe without the substrate bias and 7 Oe with -55 V of substrate bias. In the films fabricated with 1000 W of power and the target of 36 % area ratio exhibited 100 Oe of exchange field and 3 Oe of coercivity. As the thickness of NiFe layer increased, the exchange field decreased.