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      KCI등재 SCIE SCOPUS

      Study of Domain Switching Using Piezoresponse Force Microscopy in Ca0.4Sr0.6Bi4Ti4O15 Thin Film for Electromechanical Applications

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      https://www.riss.kr/link?id=A106063559

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      다국어 초록 (Multilingual Abstract)

      An attempt has been made to synthesize (Ca 0.4 Sr 0.6 )Bi 4 Ti 4 O 15 (CSBT) thin fi lm using pulsed laser deposition method andsuccessfully optimized the deposition conditions. Film with the desired phase was obtained at a substrate temperature 650 �...

      An attempt has been made to synthesize (Ca 0.4 Sr 0.6 )Bi 4 Ti 4 O 15 (CSBT) thin fi lm using pulsed laser deposition method andsuccessfully optimized the deposition conditions. Film with the desired phase was obtained at a substrate temperature 650 °Cbased on phase and morphology studies using vast analytical techniques. The average thickness and grain size of as preparedfi lm was found to be in the range of 330–400 nm and 40–65 nm. Piezoresponse force microscopy showed a completedomain reversal using switching spectroscopy. A comparatively high eff ective d *3 3 value as ~ 120 pm/V has been achieved.
      These results suggest that CSBT has a great future potential in electromechanical applications specially in high-temperaturesensors and actuators.

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      참고문헌 (Reference)

      1 Liaoying, Z., "The structure and properties of Bi-layered piezoelectric ceramics Bi4(Ca, Sr)Ti4O15" 41 (41): L1471-, 2002

      2 Wang, H., "The infl uence of substrate temperature and annealing on phase formation and crystalline properties of bismuth titanate film by APMOCVD" 27 (27): 393-, 1994

      3 MV, Gelfuso, "Synthesis and structural, ferroelectric, and piezoelectric properties of SrBi4Ti4O15 ceramics" 82 (82): 2368-2372, 1999

      4 Zhang, S. -T., "SrBi4Ti4O15 thin fi lms of Ti containing bismuth-layered-ferroelectrics prepared by pulsed laser deposition" 47 (47): 334-338, 2001

      5 Zhang, S. -T., "SrBi4Ti4O15 thin fi lms and their ferroelectric fatigue behaviors under varying switching pulse widths and frequencies" 91 (91): 3160-3164, 2002

      6 Fan, S., "Preparation and ferroelectric property of (100)-oriented Ca0.4Sr0.6Bi4Ti4O15 thin film on Pt/Ti/Sio2/si substrate" 17 (17): 445-449, 2010

      7 Korzunova, L., "PmP118. Piezoelectric ceramics for high-temperature transducers" 134 (134): 175-180, 1992

      8 Gruverman, A., "Piezoresponse force microscopy studies of switching behavior of ferroelectric capacitors on a 100-ns time scale" 100 (100): 097601-, 2008

      9 Huang, H., "Piezoresponse force microscopy observation of domain switching in Bi3.15Nd0.85Ti3O12 thin film prepared by pulsed laser deposition" 110 (110): 054105-, 2011

      10 Keeney, L., "Piezoresponse force microscopy investigations of Aurivillius phase thin films" 108 (108): 042004-, 2010

      1 Liaoying, Z., "The structure and properties of Bi-layered piezoelectric ceramics Bi4(Ca, Sr)Ti4O15" 41 (41): L1471-, 2002

      2 Wang, H., "The infl uence of substrate temperature and annealing on phase formation and crystalline properties of bismuth titanate film by APMOCVD" 27 (27): 393-, 1994

      3 MV, Gelfuso, "Synthesis and structural, ferroelectric, and piezoelectric properties of SrBi4Ti4O15 ceramics" 82 (82): 2368-2372, 1999

      4 Zhang, S. -T., "SrBi4Ti4O15 thin fi lms of Ti containing bismuth-layered-ferroelectrics prepared by pulsed laser deposition" 47 (47): 334-338, 2001

      5 Zhang, S. -T., "SrBi4Ti4O15 thin fi lms and their ferroelectric fatigue behaviors under varying switching pulse widths and frequencies" 91 (91): 3160-3164, 2002

      6 Fan, S., "Preparation and ferroelectric property of (100)-oriented Ca0.4Sr0.6Bi4Ti4O15 thin film on Pt/Ti/Sio2/si substrate" 17 (17): 445-449, 2010

      7 Korzunova, L., "PmP118. Piezoelectric ceramics for high-temperature transducers" 134 (134): 175-180, 1992

      8 Gruverman, A., "Piezoresponse force microscopy studies of switching behavior of ferroelectric capacitors on a 100-ns time scale" 100 (100): 097601-, 2008

      9 Huang, H., "Piezoresponse force microscopy observation of domain switching in Bi3.15Nd0.85Ti3O12 thin film prepared by pulsed laser deposition" 110 (110): 054105-, 2011

      10 Keeney, L., "Piezoresponse force microscopy investigations of Aurivillius phase thin films" 108 (108): 042004-, 2010

      11 Nagata, H., "Piezoelectric properties of bismuth layer-structured ferroelectric ceramics with Sr–Bi–Ti–Ta system" 273 (273): 359-364, 2002

      12 Maeder, M. D., "Piezoelectric properties of SrBi4Ti4O15 ferroelectric ceramics" 17 (17): 1376-1384, 2011

      13 Mitra, S., "Origin of enhanced piezoelectric properties and room temperature multiferroism in MnO2 added 0.90(Li0.12Na0.88NbO3)-0.10BaTiO3 ceramic" 149 : 134-138, 2018

      14 Garg, A., "Orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi4−xNdxTi3O12 films" 83 (83): 2414-2416, 2003

      15 Kim, D. J., "Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr, Ti)O3 capacitors" 91 (91): 132903-, 2007

      16 Gruverman, A., "Nanoscopic switching behavior of epitaxial SrBi2Ta2O9 films deposited by pulsed laser deposition" 76 (76): 106-108, 1999

      17 Nie, R., "MnO2-doped (Ca0.4, Sr0.6)Bi4Ti4O15 high-temperature piezoelectric ceramics with improved thermal stability" 51 (51): 5104-5112, 2016

      18 Li, G., "Microstructure and ferroelectric properties of MnO2-doped bismuth-layer (Ca, Sr)Bi4Ti4O15 ceramics" 98 (98): 064108-, 2005

      19 Sun, H., "Large remnant polarization and excellent fatigue property of vanadium-doped SrBi-4Ti4O15 thin films" 100 (100): 074102-, 2006

      20 Shur, V., "Kinetics of phase transformations in real fi nite systems: application to switching in ferroelectrics" 84 (84): 445-451, 1998

      21 Kato, K., "Impact of oxygen ambient on ferroelectric properties of polar-axis-oriented CaBi4Ti4O15 films" 86 (86): 112901-, 2005

      22 Yang, Y. C., "Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films" 92 (92): 012907-, 2008

      23 Boyle, T. J., "Formation of SrBi-2Ta2O9: Part I. Synthesis and characterization of a novel “sol-gel”solution for production of ferroelectric SrBi2Ta2O9 thin films" 11 (11): 2274-2281, 2011

      24 Setter, N., "Ferroelectric thin films: review of materials, properties, and applications" 100 (100): 051606-, 2006

      25 Sohn, D. S., "Ferroelectric SrBi4Ti4O15 thin films with high polarization grown on an IrO2 layer" 79 (79): 3672-3674, 2001

      26 Yan, J., "Enhanced ferroelectric properties of predominantly (100)-oriented CaBi4Ti4O15 thin films on Pt∕Ti∕SiO2∕Si substrates" 103 (103): 056109-, 2008

      27 Simões, A. Z., "Electromechanical properties of calcium bismuth titanate fi lms: a potential candidate for lead-free thin-film piezoelectrics" 88 (88): 072916-, 2006

      28 Feng-Qing Zhang, "Electrical properties of predominantly (100)-oriented of Ca2+ modified SrBi4Ti4O15 thin film deposited on Pt/Ti/SiO2/Si substrates" 세라믹연구소 16 (16): 511-514, 2015

      29 Haixue, Y., "Effects of A-site (NaCe) substitution with Na-defi ciency on structures and properties of CaBi4 Ti4O15-based high-curie-temperature ceramics" 40 (40): 6501-, 2001

      30 Islam, M. S., "Doping eff ects on dynamical physical properties of Ca0.6Sr0.4Bi4Ti4O15 ferroelectric ceramics with layered-perovskite structure" 28 (28): 89-94, 2012

      31 Liu, J. S., "Domain evolution in ferroelectric thin films during fatigue process" 97 (97): 104102-, 2005

      32 Suresh, M. B., "Comparison of electrical and dielectric properties of BLSF materials in Bi–Fe–Ti–O and Bi–Mn–Ti–O systems" 332 (332): 57-63, 2006

      33 Wu, A., "Abnormal domain switching in Pb(Zr, Ti)O3 thin film capacitors" 93 (93): 262906-, 2008

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      연월일 이력구분 이력상세 등재구분
      학술지등록 한글명 : Electronic Materials Letters
      외국어명 : Electronic Materials Letters
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2013-10-01 평가 등재학술지 선정 (기타) KCI등재
      2011-01-01 평가 등재후보학술지 유지 (기타) KCI등재후보
      2009-12-29 학회명변경 한글명 : 대한금속ㆍ재료학회 -> 대한금속·재료학회 KCI등재후보
      2008-01-01 평가 SCIE 등재 (신규평가) KCI등재후보
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      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 1.68 0.41 1.08
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.89 0.83 0.333 0.06
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