1 장정식, "터널링 전계효과 트랜지스터의 불순물 분포 변동 효과" 대한전자공학회 49 (49): 179-183, 2012
2 강인만, "터널링 전계효과 트랜지스터의 고주파 파라미터 추출과 분석" 대한전자공학회 49 (49): 1-6, 2012
3 Y. Yang, "Tunneling Field-Effect Transistor:Capacitance Components and Modeling" 31 (31): 752-754, 2010
4 A. M. Ionescu, "Tunnel Field-Effect Transistors as Energy-Efficient Electronic Switches" 479 (479): 329-337, 2011
5 J. W. Slotboom, "The PN Product in Silicon" 20 (20): 279-283, 1977
6 P. G. D. Agopian, "Temperature impact on the tunnel fet off-state current components" 78 (78): 141-146, 2012
7 Young Jun Yoon, "Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications" 대한전자공학회 16 (16): 172-178, 2016
8 S. Cho, "Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation" 99 (99): 243505-1-243505-1, 2011
9 M. E. Law, "Self-Consistent Model of Minority-Carrier Lifetime, Diffusion Length, and Mobility" 12 (12): 1991
10 S. M. Sze, "Physics of Semiconductor Devices 3rd edition" Wiley-Interscience 17-20, 2006
1 장정식, "터널링 전계효과 트랜지스터의 불순물 분포 변동 효과" 대한전자공학회 49 (49): 179-183, 2012
2 강인만, "터널링 전계효과 트랜지스터의 고주파 파라미터 추출과 분석" 대한전자공학회 49 (49): 1-6, 2012
3 Y. Yang, "Tunneling Field-Effect Transistor:Capacitance Components and Modeling" 31 (31): 752-754, 2010
4 A. M. Ionescu, "Tunnel Field-Effect Transistors as Energy-Efficient Electronic Switches" 479 (479): 329-337, 2011
5 J. W. Slotboom, "The PN Product in Silicon" 20 (20): 279-283, 1977
6 P. G. D. Agopian, "Temperature impact on the tunnel fet off-state current components" 78 (78): 141-146, 2012
7 Young Jun Yoon, "Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications" 대한전자공학회 16 (16): 172-178, 2016
8 S. Cho, "Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation" 99 (99): 243505-1-243505-1, 2011
9 M. E. Law, "Self-Consistent Model of Minority-Carrier Lifetime, Diffusion Length, and Mobility" 12 (12): 1991
10 S. M. Sze, "Physics of Semiconductor Devices 3rd edition" Wiley-Interscience 17-20, 2006
11 S. Cho, "More Accurate and Reliable Extraction of Tunneling Resistance in Tunneling FET and Verification in Small-Signal Circuit Operation" 60 (60): 3318-3324, 2013
12 D. J. Roulston, "Modeling and Measurement of Minority-Carrier Lifetime versus Doping in Diffused Layers of n+-p Silicon Diodes" 29 (29): 284-291, 1982
13 D. V. Lang, "Measurement of the band gap of GexSi1-X/Si strained-layer heterostructures" 47 (47): 1333-1335, 1985
14 A. C. Seabaugh, "Low-Voltage Tunnel Transistors for Beyond CMOS Logic" 98 (98): 2095-2110, 2010
15 Q. Zhang, "Low-Subthreshold-Swing Tunnel Transistors" 27 (27): 297-300, 2006
16 S. Tirkey, "Introduction of a Metal Strip in Oxide Region of Junctionless Tunnel Field-Effect Transistor to Improve DC and RF Performance" 16 (16): 714-720, 2017
17 "International Technology Roadmap for Semiconductors (ITRS), 2015 Edition"
18 O. Semenov, "Impact of technology scaling on thermal behavior of leakage current in sub-quarter micron MOSFETs:perspective of low temperature current testing" 33 (33): 985-994, 2002
19 A. Villalon, "Further Insights in TFET Operation" 61 (61): 2893-2898, 2014
20 P. F. Wang, "Complementary Tunneling Transistor for Low Power Application" 48 (48): 2281-2286, 2004
21 J. Dziewior, "Auger Coefficient for Highly Doped and Highly Excited Silicon" 31 (31): 346-348, 1977
22 "Atlas User’s Manual: Device Simulation Software" Silvaco Int. 2008
23 S. Cristoloveanu, "A Review of Sharp-Switching Devices for Ultra-Low Power Applications" 4 (4): 215-226, 2016
24 J. G. Fossum, "A Physical Model for the Dependence of Carrier Lifetime on Doping Density in Nondegenerate Silicon" 25 (25): 741-747, 1982
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