펄스 레이저 증착(Pulsed laser Deposition: PLD) 및 RF 스퍼터링 증착(Sputtering Deposition)의 단계적 적용을 통해, 표면탄성파 대역 통과 필터(Surface Acoustic Wave Bandpass Filter: SAW-BPF)용 ZnO 박막을 성장시켰...
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https://www.riss.kr/link?id=A100392974
2014
Korean
ZnO ; PLD ; Sputtering ; Surface Roughness ; SAW Filter
KCI등재
학술저널
1219-1227(9쪽)
0
0
상세조회0
다운로드국문 초록 (Abstract)
펄스 레이저 증착(Pulsed laser Deposition: PLD) 및 RF 스퍼터링 증착(Sputtering Deposition)의 단계적 적용을 통해, 표면탄성파 대역 통과 필터(Surface Acoustic Wave Bandpass Filter: SAW-BPF)용 ZnO 박막을 성장시켰...
펄스 레이저 증착(Pulsed laser Deposition: PLD) 및 RF 스퍼터링 증착(Sputtering Deposition)의 단계적 적용을 통해, 표면탄성파 대역 통과 필터(Surface Acoustic Wave Bandpass Filter: SAW-BPF)용 ZnO 박막을 성장시켰다. PLD 방법으로 성장된 ZnO 박막 위에 RF sputtering 방법을 사용하여 ZnO 박막을 재증착시켰으며, 성장된 ZnO 박막의 물성을 분석하기 위하여 XRD, SEM 및 AFM 분석장비를 사용하였다. 두 가지 증착 방법이 단계적으로 적용되어 성장된 ZnO 박막의 경우, 결정성과 배향성이 우수하게 유지되면서 표면거칠기가 향상되었다. 분석 결과, ω-scan의 반치폭과 표면거칠기의 RMS 값은 각각 0.79°와 1.108 nm였다. 그리고 성장된 양질의 ZnO 박막을 사용하여 SAW-BPF를 제작하여 측정한 결과는 응답 특성의 중심주파수가 260.8 MHz, 대역폭은 2.98 MHz, 그리고 삽입손실은 36.5 dB이었다.
다국어 초록 (Multilingual Abstract)
For development of the surface acoustic wave bandpass filter(SAW-BPF), we fabricated the high quality ZnO thin films through the step-by-step(double) deposition using two different deposition methods which are pulsed laser deposition(PLD) and RF sputt...
For development of the surface acoustic wave bandpass filter(SAW-BPF), we fabricated the high quality ZnO thin films through the step-by-step(double) deposition using two different deposition methods which are pulsed laser deposition(PLD) and RF sputtering techniques. The second growth of ZnO thin films was completed by RF sputtering method on the first ZnO thin films pre-deposited by PLD method. The characteristics of ZnO thin films were analyzed by XRD, SEM and AFM systems. The FWHM of ω-scan analysis and the minimum RMS value of surface roughness of step-by-step grown ZnO thin films were 0.79° and 1.108 nm respectively. As a result, the crystallinity and the preferred orientation of the grown ZnO thin films were kept good quality and the surface roughnesses of those were improved by post-annealing process as comparison with ZnO thin film fabricated by the conventional PLD technique only. Using these proposed ZnO thin films, we demonstrated the RF device such as SAW-BPF, built by the proposed ZnO thin films, shows that it has the bandwidth of 2.98 MHz and the insertion loss of 36.5 dB at the center frequency of 260.8 MHz, respectively.
목차 (Table of Contents)
참고문헌 (Reference)
1 K. B. Sundaram, "Work function determination of zinc oxide films" 15 : 428-, 1997
2 F. T. J. Smith, "Structure and electrical properties of sputtered films of hafnium and hafnium compounds" 41 : 4227-, 1970
3 F. K. Shan, "Structural Properties of Zinc Oxide Thin Films by Fabrication Conditions in Pulsed Laser Deposition" 한국물리학회 42 (42): 1157-1160, 2003
4 S. Ono, "SAW resonators using rf‐sputtered ZnO films on glass substrates" 33 : 217-, 1978
5 S. Takada, "Relation between optical property and crystallinity of ZnO thin films prepared by RF magnetron sputtering" 73 : 4739-4742, 1993
6 M. Rusop, "Post-growth annealing of zinc oxide thin films pulsed laser deposited under enhanced oxygen pressure on quartz and silicon substrates" 127 : 150-153, 2006
7 T. B. Hur, "Photoluminescence of polycrystalline ZnO under different annealing conditions" 94 : 5787-5790, 2003
8 D. M. Bagnall, "Optically pumped lasing of ZnO at room temperature" 70 : 2230-, 1997
9 F. K. Shan, "Optical Characterizations of ZnO Thin Films on Si (100) Substrates Deposited by Pulsed Laser Deposition" 한국물리학회 45 (45): 771-775, 2004
10 W. W. Wenas, "Electrical and optical properties of boron doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition" 70 : 7119-, 1991
1 K. B. Sundaram, "Work function determination of zinc oxide films" 15 : 428-, 1997
2 F. T. J. Smith, "Structure and electrical properties of sputtered films of hafnium and hafnium compounds" 41 : 4227-, 1970
3 F. K. Shan, "Structural Properties of Zinc Oxide Thin Films by Fabrication Conditions in Pulsed Laser Deposition" 한국물리학회 42 (42): 1157-1160, 2003
4 S. Ono, "SAW resonators using rf‐sputtered ZnO films on glass substrates" 33 : 217-, 1978
5 S. Takada, "Relation between optical property and crystallinity of ZnO thin films prepared by RF magnetron sputtering" 73 : 4739-4742, 1993
6 M. Rusop, "Post-growth annealing of zinc oxide thin films pulsed laser deposited under enhanced oxygen pressure on quartz and silicon substrates" 127 : 150-153, 2006
7 T. B. Hur, "Photoluminescence of polycrystalline ZnO under different annealing conditions" 94 : 5787-5790, 2003
8 D. M. Bagnall, "Optically pumped lasing of ZnO at room temperature" 70 : 2230-, 1997
9 F. K. Shan, "Optical Characterizations of ZnO Thin Films on Si (100) Substrates Deposited by Pulsed Laser Deposition" 한국물리학회 45 (45): 771-775, 2004
10 W. W. Wenas, "Electrical and optical properties of boron doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition" 70 : 7119-, 1991
11 M. Liu, "Effect of temperature on pulsed laser deposition of ZnO films" 252 : 4321-4326, 2006
12 F. S. Hickemell, "DC triode sputtered zinc oxide surface elastic wave transducers" 44 : 1061-, 1973
13 H. Ohta, "Current injection emission from a transparent p-n junction composed of p-SrCu2O2 /n-ZnO" 77 : 475-, 2000
14 F. K. Shan, "Characterizations of Al doped Zinc Oxide Thin Films Fabricated by Pulsed Laser Deposition" 한국물리학회 42 (42): 1374-1377, 2003
15 S. A. Studenkin, "Band-edge photoluminescence in poly-crystalline ZnO films at 1.7 K" 91 : 223-232, 2000
16 Baosheng Sang, "Atomic layer deposition of ZnO transparent conducting oxides" 112 : 216-222, 1997
ML 기법을 이용한 PCM 파형에서의 표적 탐지 및 도플러 추정
기상 레이다의 지형 클러터 제거를 위한 지형적응 클러터 맵 알고리듬 성능분석
H-형태 소형 개구를 갖는 도파관 탐침의 등가회로 해석
학술지 이력
연월일 | 이력구분 | 이력상세 | 등재구분 |
---|---|---|---|
2027 | 평가예정 | 재인증평가 신청대상 (재인증) | |
2021-01-01 | 평가 | 등재학술지 유지 (재인증) | ![]() |
2018-01-01 | 평가 | 등재학술지 유지 (등재유지) | ![]() |
2015-01-01 | 평가 | 등재학술지 유지 (등재유지) | ![]() |
2011-01-01 | 평가 | 등재학술지 유지 (등재유지) | ![]() |
2009-01-01 | 평가 | 등재학술지 유지 (등재유지) | ![]() |
2008-04-08 | 학술지명변경 | 외국어명 : The Journal Of The Korea Electromagnetic Engineering Society -> The Journal Of Korean Institute of Electromagnetic Engineering and Science | ![]() |
2007-01-01 | 평가 | 등재학술지 유지 (등재유지) | ![]() |
2004-01-01 | 평가 | 등재학술지 선정 (등재후보2차) | ![]() |
2003-01-01 | 평가 | 등재후보 1차 PASS (등재후보1차) | ![]() |
2002-01-01 | 평가 | 등재후보학술지 유지 (등재후보1차) | ![]() |
2000-07-01 | 평가 | 등재후보학술지 선정 (신규평가) | ![]() |
학술지 인용정보
기준연도 | WOS-KCI 통합IF(2년) | KCIF(2년) | KCIF(3년) |
---|---|---|---|
2016 | 0.2 | 0.2 | 0.17 |
KCIF(4년) | KCIF(5년) | 중심성지수(3년) | 즉시성지수 |
0.15 | 0.13 | 0.363 | 0.1 |