분무열분해법으로 성장된 P-형 ZnO 박막의 구조와 광학적 전기적 특성 = Structural, Optical and Electrical Properties of p-type ZnO Films Deposited by Spray Pyrolysis

다국어 초록 (Multilingual Abstract)

ABSTRACT
Structural, Optical and Electrical Properties of p-type ZnO Films Deposited by Spray Pyrolysis

Lim Su-Kyoung
Advisor : Prof. Dong Ju Seo Ph. D.
Department of physics Education
Graduate School of Education
Chosun University

ZnO:P films were deposited on the glass substrates by the spray pyrolysis using a spray solution consisted of zinc acetate and phosphorous acetate. Transparent and conducting ZnO:P films deposited at a substrate temperature of 420℃ were identified as hexagonal structure with preferred (002) and (101) and (103) plane and with lattice constant a =3.242Å and c =5.237Å. The optical transmission of the sample were about 70 ∼ 90 % in the wavelength rage from 400 nm to 1200 nm. The optical energy gap of the ZnO:P film prepared with a P concentration of 0 at.% was 3.229 eV. The optical energy gaps of the ZnO:P film were decreased with increasing P concentration in the samples. ZnO:P films were confirmed a p-type semiconductors from the results of the Hall effect measurement. The resistivity and the carrier concentration of the ZnO:P films deposited at P concentration of 4.0 at.% were 9.98 x10-3Ω.cm, 4.07 x1017cm-3, respectively.

목차 (Table of Contents)

• ABSTRACT---1
• l. 서 론---2
• Ⅱ. 이 론---4
• A. 결정구조---4
• B. 반도체의 광흡수---7
• C. Hall 효과---9
• Ⅲ. 실 험---11
• A. ZnO:P 박막의 성장---11
• B. ZnO:P 특성측정---12
• 1. 박막의 결정구조---12
• 2. 박막의 표면형태 및 조성비---13
• 3. 광투과율과 광흡수율 측정---13
• 4. 박막의 전기적 특성---14
• Ⅳ. 실험결과 및 고찰---15
• A. ZnO:P 박막의 결정 구조---15
• B. ZnO:P 박막의 표면형태---19
• C. ZnO:P박막의 화학적 조성---21
• D. ZnO:P박막의 광투과율와 광흡수 특성---22
• E. ZnO:P 박막의 전기적 특성---26
• Ⅴ. 결 론---27
• 참고문헌---28