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    KCI등재 SCIE SCOPUS

    CMOS Tunable Channel-selection LNA Employing Active Feedback Technique and Gain-boosted N-path Bandpass Filter for Advanced Cellular Applications

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    https://www.riss.kr/link?id=A107097713

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    다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

    In this paper, a CMOS tunable channel-selection low-noise amplifier (LNA) that employs an active feedback technique and gain-boosted N-path bandpass filter (BPF) is presented for advanced cellular applications. The proposed LNA achieves broadband input power matching and low noise figure (NF) performance by using the active feedback technique. The gain-boosted N-path BPF is also used to implement a high-Q RF fourth-order bandpass filtering. Simulated in a 65-nm CMOS process, the proposed LNA achieves a maximum voltage gain of 17 dB, minimum NF of 2.16 dB, maximum out-of-band blocker rejection ratio of 21 dB at 80 MHz offset frequency. The center-frequency tuning range of the LNA is 0.1 ‒ 4 GHz, which includes all FDD bands in the 3G/4G/5G sub-6 GHz cellular standards. It draws a DC bias current of 21 mA from a supply voltage of 1.2 V. The active die area is 0.8 mm2.
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    In this paper, a CMOS tunable channel-selection low-noise amplifier (LNA) that employs an active feedback technique and gain-boosted N-path bandpass filter (BPF) is presented for advanced cellular applications. The proposed LNA achieves broadband inpu...

    In this paper, a CMOS tunable channel-selection low-noise amplifier (LNA) that employs an active feedback technique and gain-boosted N-path bandpass filter (BPF) is presented for advanced cellular applications. The proposed LNA achieves broadband input power matching and low noise figure (NF) performance by using the active feedback technique. The gain-boosted N-path BPF is also used to implement a high-Q RF fourth-order bandpass filtering. Simulated in a 65-nm CMOS process, the proposed LNA achieves a maximum voltage gain of 17 dB, minimum NF of 2.16 dB, maximum out-of-band blocker rejection ratio of 21 dB at 80 MHz offset frequency. The center-frequency tuning range of the LNA is 0.1 ‒ 4 GHz, which includes all FDD bands in the 3G/4G/5G sub-6 GHz cellular standards. It draws a DC bias current of 21 mA from a supply voltage of 1.2 V. The active die area is 0.8 mm2.

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    참고문헌 (Reference)

    1 M. Darvishi, "Widely tunable 4th order switched Gm-C band-pass filter based on N-path filters" 47 (47): 3105-3119, 2012

    2 A. Ghaffari, "Tunable n-path notch filters for blocker suppression : Modeling and verification" 48 (48): 1370-1382, 2013

    3 A. Ghaffari, "Tunable high-Q N-path band-pass filters : Modeling and verification" 46 (46): 998-1010, 2011

    4 M. N. Hasan, "Tunable blocker-tolerant onchip radio-frequency front-end filter with dual adaptive transmission zeros for software-defined radio applications" 64 (64): 4419-4433, 2016

    5 J. han, "RF receiver front-end employing IIP2-enhanced 25% duty-cycle quadrature passive mixer for advanced cellular applications" 8 (8): 8166-8177, 2020

    6 M. Darvishi, "Design of active N-path filters" 48 (48): 2962-2976, 2013

    7 B. Razavi, "Design of Analog CMOS Integrated Circuits" McGraw-Hill 2001

    8 D. Lee, "CMOS tunable high-Q channelselection low-noise amplifier employing frequencytranslated poly-phase filter" 2020

    9 T. Kim, "CMOS channel-selection low-noise amplifier with high-Q RF band-pass/band-rejection Filter for highly integrated RF front-ends" 30 (30): 280-283, 2020

    10 Z. Lin, "Analysis and modeling of a gainboosted N-path switched-capacitor bandpass filter" 61 (61): 2560-2568, 2014

    1 M. Darvishi, "Widely tunable 4th order switched Gm-C band-pass filter based on N-path filters" 47 (47): 3105-3119, 2012

    2 A. Ghaffari, "Tunable n-path notch filters for blocker suppression : Modeling and verification" 48 (48): 1370-1382, 2013

    3 A. Ghaffari, "Tunable high-Q N-path band-pass filters : Modeling and verification" 46 (46): 998-1010, 2011

    4 M. N. Hasan, "Tunable blocker-tolerant onchip radio-frequency front-end filter with dual adaptive transmission zeros for software-defined radio applications" 64 (64): 4419-4433, 2016

    5 J. han, "RF receiver front-end employing IIP2-enhanced 25% duty-cycle quadrature passive mixer for advanced cellular applications" 8 (8): 8166-8177, 2020

    6 M. Darvishi, "Design of active N-path filters" 48 (48): 2962-2976, 2013

    7 B. Razavi, "Design of Analog CMOS Integrated Circuits" McGraw-Hill 2001

    8 D. Lee, "CMOS tunable high-Q channelselection low-noise amplifier employing frequencytranslated poly-phase filter" 2020

    9 T. Kim, "CMOS channel-selection low-noise amplifier with high-Q RF band-pass/band-rejection Filter for highly integrated RF front-ends" 30 (30): 280-283, 2020

    10 Z. Lin, "Analysis and modeling of a gainboosted N-path switched-capacitor bandpass filter" 61 (61): 2560-2568, 2014

    11 K. Kwon, "A hybrid transformer-based CMOS duplexer with a single-ended notch-filtered LNA for highly integrated tunable RF front-ends" 28 (28): 1032-1034, 2018

    12 K. Son, "A dual-band CMOS tunable duplexer employing switchable autotransformer for highly integrated RF front-ends" 29 (29): 495-497, 2019

    13 G. Qi, "A SAW-less tunable RF front end for FDD and IBFD combining an electrical-balance duplexer and a switched-LC N-path LNA" 53 (53): 1431-1442, 2018

    14 D. Im, "A CMOS active feedback balun-LNA with high IIP2 for wideband digital TV receivers" 58 (58): 3566-3579, 2010

    15 J. Borremans, "A 40 nm CMOS 0.4-6 GHz receiver resilient to out-of-band blockers" 46 (46): 1659-1671, 2011

    16 C.-K. Luo, "A 0.4-6-GHz 17-dBm B1dB 36-dBm IIP3 channel-selecting low-noise amplifier for SAW-less 3G/4G FDD diversity receivers" 64 (64): 1110-1121, 2016

    17 B. Van Liempd, "A +70-dBm IIP3 electricalbalance duplexer for highly integrated tunable front-ends" 64 (64): 4274-4286, 2016

    18 I. Fabiano, "A +25-dBm IIP3 1. 7-2. 1-GHz FDD receiver front end with integrated hybrid transformer in 28-nm CMOS" 65 (65): 4677-4688, 2017

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    학술지 이력

    학술지 이력
    연월일 이력구분 이력상세 등재구분
    2023 평가 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
    2020-01-01 등재 등재학술지 유지 (해외등재 학술지 평가) KCI등재
    2014-01-21 학회명변경 영문명 : The Institute Of Electronics Engineers Of Korea -> The Institute of Electronics and Information Engineers KCI등재
    2010-11-25 학술지명변경 한글명 : JOURNAL OF SEMICONDUTOR TECHNOLOGY AND SCIENCE -> JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE KCI등재
    2010-01-01 등재 등재학술지 선정 (등재후보2차) KCI등재
    2009-01-01 등재 등재후보 1차 PASS (등재후보1차) KCI등재후보
    2007-01-01 등재 등재후보학술지 선정 (신규평가) KCI등재후보
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    학술지 인용정보

    학술지 인용정보
    기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
    2016 0.42 0.13 0.35
    KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
    0.3 0.29 0.308 0.03
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