2P-202 The investigation of reflectance on the various silicon wires with high aspect ratio fabricated by electrochemical etching = 2P-202 The investigation of reflectance on the various silicon wires with high aspect ratio fabricated by electrochemical etching

다국어 초록 (Multilingual Abstract)

The nano- and micro-structures of silicon surfaces, known as black silicon, is a promising approach to eliminate surface reflection in photovoltaic devices without a conventional anti-reflection layer. This might lead to both increase in efficiency and reduction in the manufacturing costs of solar cells. The various silicon wires with high aspect ratio is fabricated by varying electrochemical etching conditions and depositing ZnO using atomic layer deposition (ALD) technique. The reflectance on the various silicon wires is investigated a range of visible light wavelength (from 300 to 800nm). As a result, we have observed the change of the reflectance with the shape of silicon wires, and fabricated the silicon wires with the reflectance of 10% below from 300 to 800nm wavelength. Additionally the micro-structures of silicon surfaces is fabricated at a low cost and simple process, and contributed to improvement of solar cell efficiency.