초크랄스키법에 의한 실리콘 단결정 성장시 커스프 자기장이 유동 및 물질전달에 미치는 영향 = The Effects of Cusp Magnetic Field on the Fluid Flow and Mass Transfer in Czochralski Growth of Silicon

다국어 초록 (Multilingual Abstract)

The effects of cusp magnetic field on the fluid flow and mass transfer were simulated by finite difference method in large-scale Czochralski single crystal growth of silicon. The flow intensities were greatly diminished and the distribution of azimutal velocities was similar to the rigid body motions when the cusp magnetic field was applied. The average concentrations and the radial uniformities of oxygen for various crucible and crystal rotation rates at solidification interface were calculated in a cusp magnetic field. The distributions of oxygen in Czochralski grown silicon were critically under the control of melt motions. The average oxygen concentrations are lower and the radial uniformity of the oxygen concentrations at solidification interface became better as the cusp magnetic field was increased. On the basis of the above results, the optimum starting conditions for the operation were numerically calculated.

목차 (Table of Contents)

• 1. 서론
• 2. 지배방정식 및 경계조건
• 3. 자기력 계산
• 4. 가정 및 수학적 모델링
• 5. 결과 및 고찰
• 유동 및 온도 분포
• 산소 농도 분포의 변화
• 적정 조업 시작 조건 예측
• 6. 결론