Technology Computer-Aided Design과 결합된 SPICE를 통한 금속-강유전체-반도체 전계효과 트랜지스터의 전기적 특성 해석 = Electrical analysis of Metal-Ferroelectric - Semiconductor Field - Effect Transistor with SPICE combined with Technology Computer-Aided Design

다국어 초록 (Multilingual Abstract)

A simulation method combined with the simulation program with integrated circuit emphasis (SPICE) and the technology computer-aided design (TCAD) has been proposed to estimate the electrical characteristics of the metal-ferroelectric-semiconductor field effect transistor (MFS/MFISFET). The complex behavior of the ferroelectric property was analyzed and surface potential of the channel region in the MFS gate structure was calculated with the numerical TCAD method. Since the calculated surface potential is equivalent with the surface potential obtained with the SPICE model of the conventional MOSFET, we can obtain the current-voltage characteristics of MFS/MFISFET corresponding to the applied gate bias. Therefore, the proposed method will be very useful for the design of the integrated circuits with MFS/MFISFET memory cell devices.

참고문헌 (Reference)

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