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      GdFe 박막의 증착속도에 따른 조성 및 자기특성의 변화

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      https://www.riss.kr/link?id=A76075601

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      We have studied the variations of composition and magnetic properties with deposition rate in GdFe thin films by means of DC magnetron sputtering with the enhanced complex target method. Gd atomic percent was decreased with the increase of deposite rate. It appeared the transition phenomena at 1.0 Å/s the deposition rate. Also, the deposition rate increased with input power and the sputtering efficience was proportional to the number of Gd chip. An increase of the coercivity with input power can be interpreted by the large size of Fe crystal grains. We have introduced by the diffusion guard sputtering and it was effective for reproducibility of the sample. We have measured θk with Kerr angle gauge, and could observe that the θk was little varied with input power.
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      We have studied the variations of composition and magnetic properties with deposition rate in GdFe thin films by means of DC magnetron sputtering with the enhanced complex target method. Gd atomic percent was decreased with the increase of deposite ra...

      We have studied the variations of composition and magnetic properties with deposition rate in GdFe thin films by means of DC magnetron sputtering with the enhanced complex target method. Gd atomic percent was decreased with the increase of deposite rate. It appeared the transition phenomena at 1.0 Å/s the deposition rate. Also, the deposition rate increased with input power and the sputtering efficience was proportional to the number of Gd chip. An increase of the coercivity with input power can be interpreted by the large size of Fe crystal grains. We have introduced by the diffusion guard sputtering and it was effective for reproducibility of the sample. We have measured θk with Kerr angle gauge, and could observe that the θk was little varied with input power.

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