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    KCI등재 SCIE SCOPUS

    A Single-ended Simultaneous Bidirectional Transceiver in 65-nm CMOS Technology

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    https://www.riss.kr/link?id=A102635902

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    다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

    A simultaneous bidirectional transceiver over a single wire has been developed in a 65 nm CMOS technology for a command and control bus. The echo signals of the simultaneous bidirectional link are cancelled by controlling the decision level of receiver comparators without power-hungry operational amplifier (op-amp) based circuits. With the clock information embedded in the rising edges of the signals sent from the source side to the sink side, the data is recovered by an open-loop digital circuit with 20 times blind oversampling. The data rate of the simultaneous bidirectional transceiver in each direction is 75 Mbps and therefore the overall signaling bandwidth is 150 Mbps. The measured energy efficiency of the transceiver is 56.7 pJ/b and the bit-error-rate (BER) is less than 10<SUP>-12</SUP> with 2<SUP>7</SUP>-1 pseudo-random binary sequence (PRBS) pattern for both signaling directions.
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    A simultaneous bidirectional transceiver over a single wire has been developed in a 65 nm CMOS technology for a command and control bus. The echo signals of the simultaneous bidirectional link are cancelled by controlling the decision level of receive...

    A simultaneous bidirectional transceiver over a single wire has been developed in a 65 nm CMOS technology for a command and control bus. The echo signals of the simultaneous bidirectional link are cancelled by controlling the decision level of receiver comparators without power-hungry operational amplifier (op-amp) based circuits. With the clock information embedded in the rising edges of the signals sent from the source side to the sink side, the data is recovered by an open-loop digital circuit with 20 times blind oversampling. The data rate of the simultaneous bidirectional transceiver in each direction is 75 Mbps and therefore the overall signaling bandwidth is 150 Mbps. The measured energy efficiency of the transceiver is 56.7 pJ/b and the bit-error-rate (BER) is less than 10<SUP>-12</SUP> with 2<SUP>7</SUP>-1 pseudo-random binary sequence (PRBS) pattern for both signaling directions.

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    목차 (Table of Contents)

    • Abstract
    • Ⅰ. INTRODUCTION
    • Ⅱ. SIMULTANEOUS BIDIRECTIONAL TRANSCEIVER
    • Ⅲ. EXPERIMENTAL RESULTS
    • Ⅳ. CONCLUSION
    • Abstract
    • Ⅰ. INTRODUCTION
    • Ⅱ. SIMULTANEOUS BIDIRECTIONAL TRANSCEIVER
    • Ⅲ. EXPERIMENTAL RESULTS
    • Ⅳ. CONCLUSION
    • REFERENCES
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    참고문헌 (Reference)

    1 R. J. Drost, "An 8-Gb/s/pin simultaneously bidirectional transceiver in 0.35-μm CMOS" 39 (39): 1894-1908, 2004

    2 B. Casper, "An 8-Gb/s simultaneous bidirectional link with on-die waveform capture" 38 (38): 2111-2120, 2003

    3 G. Chandra, "A full-duplex 10Gbase-T transmitter hybrid with SFDR>65dBc over 1 to 400MHz in 40nm CMOS" 144-146, 2011

    4 R. Farjad, "A 48-port FCCcompliant 10Gbase-T transmitter with mixed-mode adaptive echo canceller" 47 (47): 3261-3272, 2012

    5 J.-H. Kim, "A 4-Gb/s/pin lowpower memory I/O interface using 4-level simultaneous bi-directional signaling" 40 (40): 89-101, 2005

    6 J.-K. Kim, "A 3.6Gb/s/pin simultaneous bidirectional (SBD) I/O interface for high-speed DRAM" 414-415, 2004

    7 Y.-H. Song, "A 0.47-0.66 pJ/bit, 4.8-8Gb/s I/O transceiver in 65nm CMOS" 48 (48): 1276-1289, 2013

    8 K. Kaviani, "0.4-mW/Gb/s near-ground receiver front-end with replica transconductance termination calibration for a 16-Gb/s source-series terminated transceiver" 48 (48): 636-648, 2013

    1 R. J. Drost, "An 8-Gb/s/pin simultaneously bidirectional transceiver in 0.35-μm CMOS" 39 (39): 1894-1908, 2004

    2 B. Casper, "An 8-Gb/s simultaneous bidirectional link with on-die waveform capture" 38 (38): 2111-2120, 2003

    3 G. Chandra, "A full-duplex 10Gbase-T transmitter hybrid with SFDR>65dBc over 1 to 400MHz in 40nm CMOS" 144-146, 2011

    4 R. Farjad, "A 48-port FCCcompliant 10Gbase-T transmitter with mixed-mode adaptive echo canceller" 47 (47): 3261-3272, 2012

    5 J.-H. Kim, "A 4-Gb/s/pin lowpower memory I/O interface using 4-level simultaneous bi-directional signaling" 40 (40): 89-101, 2005

    6 J.-K. Kim, "A 3.6Gb/s/pin simultaneous bidirectional (SBD) I/O interface for high-speed DRAM" 414-415, 2004

    7 Y.-H. Song, "A 0.47-0.66 pJ/bit, 4.8-8Gb/s I/O transceiver in 65nm CMOS" 48 (48): 1276-1289, 2013

    8 K. Kaviani, "0.4-mW/Gb/s near-ground receiver front-end with replica transconductance termination calibration for a 16-Gb/s source-series terminated transceiver" 48 (48): 636-648, 2013

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    학술지 이력

    학술지 이력
    연월일 이력구분 이력상세 등재구분
    2023 평가 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
    2020-01-01 등재 등재학술지 유지 (해외등재 학술지 평가) KCI등재
    2014-01-21 학회명변경 영문명 : The Institute Of Electronics Engineers Of Korea -> The Institute of Electronics and Information Engineers KCI등재
    2010-11-25 학술지명변경 한글명 : JOURNAL OF SEMICONDUTOR TECHNOLOGY AND SCIENCE -> JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE KCI등재
    2010-01-01 등재 등재학술지 선정 (등재후보2차) KCI등재
    2009-01-01 등재 등재후보 1차 PASS (등재후보1차) KCI등재후보
    2007-01-01 등재 등재후보학술지 선정 (신규평가) KCI등재후보
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    학술지 인용정보

    학술지 인용정보
    기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
    2016 0.42 0.13 0.35
    KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
    0.3 0.29 0.308 0.03
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