<P>Novel selective oxidation fin channel MOSFETs (SoxFETs) have been developed for fabricating fin channel MOSFETs with low source/drain (S/D) series resistance. Using this technique, SoxFETs have the surround gate structure and gradually increa...
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https://www.riss.kr/link?id=A107526069
Cho, Y.K. ; Roh, T.M. ; Kwon, J.K. ; Kim, J.
2007
-
SCOPUS,SCIE
학술저널
734-735(2쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Novel selective oxidation fin channel MOSFETs (SoxFETs) have been developed for fabricating fin channel MOSFETs with low source/drain (S/D) series resistance. Using this technique, SoxFETs have the surround gate structure and gradually increa...
<P>Novel selective oxidation fin channel MOSFETs (SoxFETs) have been developed for fabricating fin channel MOSFETs with low source/drain (S/D) series resistance. Using this technique, SoxFETs have the surround gate structure and gradually increased S/D extension regions. The new structure demonstrates a 74% reduction in S/D series resistance compared with the control device. It was also found that the SoxFET behaved better than the control device in current drivability by suppressing subthreshold swing and drain induced barrier lowering characteristic degradation.</P>
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