In this paper, Active Band Pass Filter using AI(Active Inductor) is designed and fabricated. Active Inductor represented 1.74 nH inductance only using Single P-HEMT (Psedomorphic High Electron Mobility : ATF-34143 producted by Agilent) and its charact...
In this paper, Active Band Pass Filter using AI(Active Inductor) is designed and fabricated. Active Inductor represented 1.74 nH inductance only using Single P-HEMT (Psedomorphic High Electron Mobility : ATF-34143 producted by Agilent) and its characteristies are similiar to ideal 2 nH inductor. The whole circuit was fabricated on the Teflon substrate ( ε_(y)=3.38, T=0.78mm) using a microstrip line and ADS(Advanced Design System) was used in order to design and optimize. The results between simulation and measurement of Active Band Pass Filter have good agreements. The results indicate that Active Band Pass Filter using AI (Active Inductor) adequate for recievers of IMT-2000 User Equipments