Sol-Gel 법으로 제작한 $PbTiO_{3}-PbZrO_{3}-Pb(Ni_{1/3}Nb_{2/3})O_{3}$ 압전박막의 특성 = The Characteristics of $PbTiO_{3}-PbZrO_{3}-Pb(Ni_{1/3}Nb_{2/3})O_{3}$ Piezoelectric Thin Film Made by Sol-Gel Method

다국어 초록 (Multilingual Abstract)

In order to fabricate the piezoelectric thin film of the PZT-PNN ternary compound, the metal alkoxides were used as starting materials. The electrical and crystalline properties of the thin film were evaluated. The X- RD study shows that the crystallization of the film is optimized at $550^{\circ}C$ of sintering temperature. According to the D-E hysterisis curve, the coercive field is 28.8 kV /cm, and the remanent polariztion is $18.3\;{\mu}C/cm^{2}$. The break down voltages of the thin films are $76.0\;{\sim}\;27.0\;MV/m$. When the sintering temperature is raised, the break down voltage is lowered. As a result of measuring the C-V characteristic curve of the ternary compound piezoelectric thin film, the relative dielectric constants are 406 for the composition (50:40:10), 1084 for the composition (50:30:20), 723 for the composition (45:35:20) and 316 for the composition (40:40:20).