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      KCI등재 SCOPUS SCIE

      Nanosilver particles-based conductive patterns developed by direct soft imprint lithography

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      https://www.riss.kr/link?id=A104318110

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      다국어 초록 (Multilingual Abstract)

      For the direct patterning of electronic device structures, the present work explored an idea of using UV imprint based on nanosilver particles-dispersed UV (ultraviolet) curable resin. In current work, asreceived Ag solution was applied to HEMA (hydroxyethyl methacrylate) as an ultraviolet (UV) curable precursor with the addition of photoinitiator (~3 wt%) to formulate electrically conductive resin mixtures with the Ag contents of 40–60 wt%. The UV exposed imprinted patterns with PDMS (polydimethylsiloxane) stamp become electrically conductive after properly optimized heat treatment. Those are, then, wetetched to remove imprint residue, which lead to the formation of the isolated current transfer media. This imprint scheme can contribute to substantially reduced process steps and corresponding costs associated with additional metal processes.
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      For the direct patterning of electronic device structures, the present work explored an idea of using UV imprint based on nanosilver particles-dispersed UV (ultraviolet) curable resin. In current work, asreceived Ag solution was applied to HEMA (hydro...

      For the direct patterning of electronic device structures, the present work explored an idea of using UV imprint based on nanosilver particles-dispersed UV (ultraviolet) curable resin. In current work, asreceived Ag solution was applied to HEMA (hydroxyethyl methacrylate) as an ultraviolet (UV) curable precursor with the addition of photoinitiator (~3 wt%) to formulate electrically conductive resin mixtures with the Ag contents of 40–60 wt%. The UV exposed imprinted patterns with PDMS (polydimethylsiloxane) stamp become electrically conductive after properly optimized heat treatment. Those are, then, wetetched to remove imprint residue, which lead to the formation of the isolated current transfer media. This imprint scheme can contribute to substantially reduced process steps and corresponding costs associated with additional metal processes.

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      참고문헌 (Reference)

      1 J.P. Rolland, 126 : 2322-, 2004

      2 J.X. Gao, 16 : 956-, 2004

      3 J.H. Choi, 85 : 195-, 2008

      4 M.D. Stewart, 5751 : 210-, 2005

      5 S.N. Kang, "Proceedings of the Nanoimprint Nanoprint Technology 2006 Conference" SanFrancisco, 79-, 2006

      1 J.P. Rolland, 126 : 2322-, 2004

      2 J.X. Gao, 16 : 956-, 2004

      3 J.H. Choi, 85 : 195-, 2008

      4 M.D. Stewart, 5751 : 210-, 2005

      5 S.N. Kang, "Proceedings of the Nanoimprint Nanoprint Technology 2006 Conference" SanFrancisco, 79-, 2006

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2008-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2007-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2003-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 1.8 0.18 1.17
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.92 0.77 0.297 0.1
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