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あぁかがさざただなはばぱまやゃらわゎんいぃきぎしじちぢにひびぴみりうぅくぐすずつづっぬふぶぷむゆゅるえぇけげせぜてでねへべぺめれおぉこごそぞとどのほぼぽもよょろを

アァカサザタダナハバパマヤャラワヮンイィキギシジチヂニヒビピミリウゥクグスズツヅッヌフブプムユュルエェケゲセゼテデヘベペメレオォコゴソゾトドノホボポモヨョロヲ ―

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á à Á À é è É È ç Ç ê

Ä Ö Ü ä ö ü ß

ְ ֳ ֲ ֱ ָ ַ ֵ ֶ ִ ֹ ּ ֻ ׂ ׁ ּ פ ם ן ו ט א ר ק ף ך ל ח י ע כ ג ד ש ץ ת צ מ נ ה ב

‘ ’ “ ” 〔〕〈〉「」『』【】＂（）［］｛｝

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、。 · ‥ … ¨ 〃 ― ∥ ＼ ∼ ´ ～ ˇ ˘ ˝ ˚ ˙ ¸ ˛ ¡ ¿ ː ！＇，．／：；？＾＿｀｜

½ ⅓ ⅔ ¼ ¾ ⅛ ⅜ ⅝ ⅞ ¹ ² ³ ⁴ ⁿ ₁ ₂ ₃ ₄

Æ Ð Ħ Ĳ Ł Ø Œ Þ Ŧ Ŋ æ đ ð ħ ı ĳ ĸ ŀ ł ø œ ß þ ŧ ŋ ŉ

А Б В Г Д Е Ё Ж З И Й К Л М Н О П Р С Т У Ф Х Ц Ч Ш Щ Ъ Ы Ь Э Ю Я а б в г д е ё ж з и й к л м н о п р с т у ф х ц ч ш щ ъ ы ь э ю я

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RISS 인기검색어

High Density Plasma 발생 장치의 구성 및 특성 = High Density Plasma Generation System and Its Characteristics

한글로보기

https://www.riss.kr/link?id=A19575526

저자

황도원 (VMT Co., Ltd.) ; 손영호 (Kyungwoon University) ; 김인수 (Kyungwoon University)
발행기관
경운대학교 산업기술연구소
학술지명
産業技術硏究論文誌
권호사항

Vol.1 No.1(B) [1999]
발행연도
1999
작성언어
Korean
KDC
540.000
자료형태
학술저널
수록면

126-138(13쪽)
제공처
RISS
소장기관
- 경운대학교 벽강중앙도서관

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다국어 초록 (Multilingual Abstract)

High density plasma deposition system was organized using electron cyclotron resonance source, and its plasma properties were measured by using the Langmuir probe method. The ECR microwave plasma conditions could be controlled by means of mass flow controller and ECR microwave power according to the vacuum pressure of 2.3×10^-5 Torr to 5.2×10^-2 Torr. The ion density was increased with an increase of gas flow rate, and a decrease of the distance between ECR source and substrates. The electron temperatures were decreased with an increase of gas flow rate, and a decrease of the distance between ECR source and substrates. The estimated plasma potential was from 27.0V to 31.5V

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High density plasma deposition system was organized using electron cyclotron resonance source, and its plasma properties were measured by using the Langmuir probe method. The ECR microwave plasma conditions could be controlled by means of mass flow co...

High density plasma deposition system was organized using electron cyclotron resonance source, and its plasma properties were measured by using the Langmuir probe method. The ECR microwave plasma conditions could be controlled by means of mass flow controller and ECR microwave power according to the vacuum pressure of 2.3×10^-5 Torr to 5.2×10^-2 Torr. The ion density was increased with an increase of gas flow rate, and a decrease of the distance between ECR source and substrates. The electron temperatures were decreased with an increase of gas flow rate, and a decrease of the distance between ECR source and substrates. The estimated plasma potential was from 27.0V to 31.5V