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      Fe - Hf - O계 박막에서 조성이 미세구조 및 연자기 특성에 미치는 효과

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      https://www.riss.kr/link?id=A76075669

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      다국어 초록 (Multilingual Abstract)

      The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at P_(O2) = 10 % by rf magnetron sputtering method in Ar + O₂ mixed gas atmosphere, is investigated. Newly developed Fe_(82)Hf_(3.4)O_(14.6) film exhibits good soft magnetic properties with 4πMs =17.7 kG, Hc=0.7 Oe and μ_(eff) (0.5~100 ㎒) =2,500, respectively, The Fe-Hf-O films are composed of α-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally, It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf, It results from decreasing the α-Fe grain size by precipitates (Hf and O), high electrical resistivity. The Fe_(82)Hf_(3.4)O_(14.6) film exhibits the quality factor (Q = μ' / μ) of 25 at 20 ㎒, These good frequency characteristics are considered to be superior to other films already reported.
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      The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at P_(O2) = 10 % by rf magnetron sputtering method in Ar + O₂ mixed gas atmosphere, is investigated. Newly developed Fe_(82)Hf_(3.4)O_(14.6)...

      The microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced at P_(O2) = 10 % by rf magnetron sputtering method in Ar + O₂ mixed gas atmosphere, is investigated. Newly developed Fe_(82)Hf_(3.4)O_(14.6) film exhibits good soft magnetic properties with 4πMs =17.7 kG, Hc=0.7 Oe and μ_(eff) (0.5~100 ㎒) =2,500, respectively, The Fe-Hf-O films are composed of α-Fe nanograins and amorphous phase with larger amounts of Hf and O elements which chemically combine each other. With increasing Hf area fraction, Hf and O contents increased proportionally, It was considered that O content in films was determined by Hf contents, because O was chemically combined with Hf, It results from decreasing the α-Fe grain size by precipitates (Hf and O), high electrical resistivity. The Fe_(82)Hf_(3.4)O_(14.6) film exhibits the quality factor (Q = μ' / μ) of 25 at 20 ㎒, These good frequency characteristics are considered to be superior to other films already reported.

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