MoS2 기반의 쇼트키 반도체 광전소자 = MoS2-Embedded Schottky Photoelectric Devices

다국어 초록 (Multilingual Abstract)

High-performing photoelectric device was realized for the MoS2-embedded Si device. MoS2-coating was performed by a large-scale available sputtering method. The MoS2-layer coating on the p-Si spontaneously provides the rectifying current flow with a significant rectifying ratio of 617. Moreover, the highly optical transmittance of MoS2-layer provides over 80% transmittance for broad wavelengths. The MoS2-embedded Si photodetector shows the sensitive photoresponse for middle and long wavelength photons due to the functional MoS2-layer, which resolves the conventional limit of Si for long wavelength detection. The functional design of MoS2-layer would provide a promising route for the enhanced photoelectric devices, including photovoltaics cells and photodetectors.

국문 초록 (Abstract)

MoS2-layer를 실리콘에 코팅하여, 고성능 광전소자를 개발하였다. MoS2-layer 를 p-Si 에 코팅하면, 자발적으로 다이오드가 형성되어, 전류의 정류특성이 확보된다. 본 연구에서는 매우 높은 정류비인 617의 값을 얻었다. 또한 MoS2-layer 는 광학성능이 매우 좋아서 넓은 파장대에서 80% 이상의 투과도를 보인다. 이러한 특성을 이용하여, 입사광에 대한 Photodetector 로 응용이 가능하다. 기존의 실리콘 소자는 장파장 신호에 대한 감지가 어려운데, MoS2-layer/p-Si 의 소자에서는 이러한 문제를 해결하고 매우 좋은 광반응을 보인다. 이러한 특성을 이용하게 되면 태양전지와 광센서를 포함한 다양한 광전소자에서의 성능을 크게 향상 시킬 수 있을 것으로 예상된다.

참고문헌 (Reference)

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