Joule열이 Sn-3.5Ag 플립칩 솔더범프의 Electromigration 거동에 미치는 영향 = Effect of Joule Heating on Electromigration Characteristics of Sn-3.5Ag Flip Chip Solder Bump

다국어 초록 (Multilingual Abstract)

Electromigration characteristics of Sn-3.5Ag flip chip solder bump were analyzed using flip chip packages which consisted of Si chip substrate and electroplated Cu under bump metallurgy. Electromigration test temperatures and current densities peformed were $140{\sim}175^{\circ}C\;and\;6{\sim}9{\times}10^4A/cm^2$ respectively. Mean time to failure of solder bump decreased as the temperature and current density increased. The activation energy and current density exponent were found to be 1.63 eV and 4.6, respectively. The activation energy and current density exponent have very high value because of high Joule heating. Evolution of Cu-Sn intermetallic compound was also investigated with respect to current density conditions.

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