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A self consistent, 2-Dimensional solution of Poisson and Schrodinger equation for the pseudomorphic GaInAs/AlGaAs HEMT Device

한글로보기

https://www.riss.kr/link?id=A3351591

저자

Song, Y. J. (Department of Electronics Engineering, Chung ang University) ; Kim, N. S. (Department of Electronics Engineering, Chung ang University) ; Kim, B. S. (Department of Electronics Engineering, Chung ang University) ; Hwang, H. J. (Department of Electronics Engineering, Chung ang University)
발행기관
대한전자공학회(The Korean Institute of Telematics and Electronics)
학술지명
HICEC:Harbin International Conference on Electronics and Computers
권호사항

Vol.1 No.1 [1992]
발행연도
1992
작성언어
English
KDC
569.000
자료형태
학술저널
발행기관 URL
http://www.ieek.or.kr
수록면

16-19(4쪽)
제공처
DBpia

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다국어 초록 (Multilingual Abstract)

We present a self-consistent, 2-dimensional solution of the Poisson and Schro¨dinger equation based on the finite difference method with a nonuniform mesh size for a GaInAs/AIGaAs HEMT device. During the calculation, however, we calculate Schro¨dinger equation only a some region of device, not a fully region in order to save the memory and the speed-up of computation, and then use the approximated data for the other region using by a linear interpolation method with a given values under the various bias conditions. So, it can be used rather easily in any arbiturary modulation doped structure.

번역하기

We present a self-consistent, 2-dimensional solution of the Poisson and Schro¨dinger equation based on the finite difference method with a nonuniform mesh size for a GaInAs/AIGaAs HEMT device. During the calculation, however, we calculate Schro¨ding...

We present a self-consistent, 2-dimensional solution of the Poisson and Schro¨dinger equation based on the finite difference method with a nonuniform mesh size for a GaInAs/AIGaAs HEMT device. During the calculation, however, we calculate Schro¨dinger equation only a some region of device, not a fully region in order to save the memory and the speed-up of computation, and then use the approximated data for the other region using by a linear interpolation method with a given values under the various bias conditions. So, it can be used rather easily in any arbiturary modulation doped structure.