We present a self-consistent, 2-dimensional solution of the Poisson and Schro¨dinger equation based on the finite difference method with a nonuniform mesh size for a GaInAs/AIGaAs HEMT device. During the calculation, however, we calculate Schro¨ding...
We present a self-consistent, 2-dimensional solution of the Poisson and Schro¨dinger equation based on the finite difference method with a nonuniform mesh size for a GaInAs/AIGaAs HEMT device. During the calculation, however, we calculate Schro¨dinger equation only a some region of device, not a fully region in order to save the memory and the speed-up of computation, and then use the approximated data for the other region using by a linear interpolation method with a given values under the various bias conditions. So, it can be used rather easily in any arbiturary modulation doped structure.