희토류 금속을 이용한 니켈 실리사이드의 전기 및 물리적 특성 = Electrical and Physical Characteristics of Nickel Silicide using Rare-Earth Metals

다국어 초록 (Multilingual Abstract)

In this paper, we investigated electrical and physical characteristics of nickel silicide using rare-earth metals(Er, Yb, Tb, Dy), Incorporated Ytterbium into Ni-silicide is proposed to reduce work function of Ni-silicide for nickel silicided schottky barrier diode (Ni-silicided SBD). Nickel silicide makes ohmic-contact or low schottky barrier height with p-type silicon because of similar work function (${\phi}_M$) in comparison with p-type silicon. However, high schottky barrier height is formed between Ni-silicide and p-type substrate by depositing thin ytterbium layer prior to Ni deposition. Even though the ytterbium is deposited below nickel, ternary phase $Yb_xN_{1-x}iSi$ is formed at the top and inner region of Ni-silicide, which is believed to result in reduction of work function about 0.15 - 0.38 eV.

참고문헌 (Reference)

1 N. Biswas, "Work function tuning of nickel silicide by co-sputtering nickel and silicon" 87 : 171908-1, 2005

2 J. Yuan, "Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications" 26 : 87-, 2005

3 J.H. Lee, "Tunable work function dual metal gate technology for bulk and non-bulk CMOS" 359-, 2002

4 C. Lavoie, "Towards implementation of a nickel silicide process for CMOS technologies" 70 : 144-, 2003

5 Q. Xiang, "Strained silicon NMOS with nickel-silicide metal gate" 101-, 2003

6 A. Yagishita, "Reduction of threshold voltage deviation in Damascene metal gate MOSFETs" 257-, 1999

7 J.R.Waldrop, "Rare earth metal schottky-barrier contact to GaAs" 46 : 864-, 1985

8 J.M. Larson, "Overview and status of metal S/D Schottky-barrier MOSFET technology" 53 : 1048-, 2006

9 B. Cheng, "Metal gates for advanced sub-80 nm SOI CMOS technology" 9192-, 2001

10 H.C. Wen, "Investigation of dopant effects in CoSi2 and NiSi fully silicided metal gates" 8 : G119-, 2005

11 C.C. Hobbs, "Fermi-level pinning at the polysilicon/ metal oxide interface-Part" 51 : 971-, 2004

12 M. Jang, "Characterization of erbium-silicided Schottky diode junction" 26 : 354-, 2005

13 J.K. Schaeffer, "Challenges for the integration of metal gate electrodes" 287-, 2004