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RISS 인기검색어

Sol-gel 방법에 의한 강유전체 LiNbO_3 박막의 물리적 특성 = Physical Properties of Rerroelectric LiNbO_3 Thin Film Prepared by Slo-Gel Process

한글로보기

https://www.riss.kr/link?id=A19574174

저자

윤정걸 (수원대학교 이과대학 물리학과)
발행기관
수원대학교 기초과학연구소
학술지명
基礎科學論文集
권호사항

Vol.1 No.- [1992]
발행연도
1992
작성언어
Korean
주제어

ferroelectric thin film ; LiNbO_3 ; sol-gel ; thin film growth
KDC
420.000
자료형태
학술저널
수록면

75-83(9쪽)
제공처
RISS

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다국어 초록 (Multilingual Abstract)

Ferroelectric LiNbO_3 thin films are prepared by sol-gel method on p-Si (100), (111), and R-cut sapphire substrates. The film on Si substrates are polycrystalline whereas that on sapphire one is nearly epitaxial. Band gap energy of the film is found to be about 4.2 eV, which was roughly estimated from absorption edge. Polycrystalline film growth on Si substrates is investigated by spectroscopic ellipsometry. Density of the film increases as the thickness of the film increases. Most of the porosities of the film are formed at the interface between the film and substrate. The electrical property of the film is also reported.

번역하기

Ferroelectric LiNbO_3 thin films are prepared by sol-gel method on p-Si (100), (111), and R-cut sapphire substrates. The film on Si substrates are polycrystalline whereas that on sapphire one is nearly epitaxial. Band gap energy of the film is found t...

Ferroelectric LiNbO_3 thin films are prepared by sol-gel method on p-Si (100), (111), and R-cut sapphire substrates. The film on Si substrates are polycrystalline whereas that on sapphire one is nearly epitaxial. Band gap energy of the film is found to be about 4.2 eV, which was roughly estimated from absorption edge. Polycrystalline film growth on Si substrates is investigated by spectroscopic ellipsometry. Density of the film increases as the thickness of the film increases. Most of the porosities of the film are formed at the interface between the film and substrate. The electrical property of the film is also reported.