Eco-Friendly MoO3 Doped Indium Oxide Thin-Film Transistor

다국어 초록 (Multilingual Abstract)

For the development of high-performance thin-fi lm transistors (TFTs), In 2 O 3 , which can be produced through a solution process and possesses exceptional electrical properties, is a key oxide semiconductor material. On the basis of aqueous solutions, In 2 O 3 semiconductors can be manufactured in an environmentally benign manner, but they have disadvantages such as diminished electrical properties and decreased stability. This investigation investigated the eff ect of MoO 3 doping concentration on the electrical properties and stability of In 2 O 3 TFT fabricated from aqueous solutions. By modifying the oxygen vacancy, the addition of MoO 3 to the In 2 O 3 solution reduced defects within the semiconductor thin fi lm and enhanced the stability of the oxide semiconductor. Observations of MoO 3 doping concentration condition (0 wt%, 3 wt%, 5 wt%, 7 wt%) in In 2 O 3 TFT exhibited enhancements in Vth : 12.8 V → 3.7 V movement and on/off current ratio. Moreover, the results of positive bias stress and negative bias stress, which are evaluations of reliability, confi rmed the eff ect of enhancing the electrical properties and stability of In 2 O 3 TFT through MoO 3 doping by decreasing Vth as the doping concentration increases. To observe the change in In 2 O 3 fi lm by MoO 3 doping concentration, atomic force microscopy and contact angle measurements confi rmed the gradual interface change, and X-ray photoelectron spectroscopy analysis confi rmed the change in physical properties of In 2 O 3 fi lm due to MoO 3 doping. In addition, a Mo-In 2 O 3 TFT-based resistance load inverter was evaluated, and its applicability as an active electronic device was confi rmed by analyzing its inversion characteristics under diff erent VDD conditions.