Ga doping 농도에 따른 ZnGaO 산화물의 투명특성 연구 = A Study on the transparent properties of ZnGaO oxide thin films depend on the Ga doping concentration

다국어 초록 (Multilingual Abstract)

We have studied the transparent properties of Ga doped ZnO compound oxide semiconductor by fabricating ZGO thin films using co-sputtering system. The power for sputtering ZnO target was fixed at 200 watt while those for Ga2O3 target chaeged from 30 watt to 100 watt. The structure of ZGO films showed (002) prefer - orientated crystalline based on ZnO bonds. The ionic bonding structure of ZnGaO with the s orbital superposed among the neighbor atoms develops the origin of high mobility and high energy band gap around 3.4 eV. As the gallium contents increase over 7%, the resistivity rapidly reduced about 0.05 ohm-cm. However, the films were transparent with 88% of visible light passing through the films. This report focused on the correlation effect about the gallium impurity concentration causing electrical characteristics changing from a transparent insulator to a transparent metallic thin films.