HgCdTe 제작 다이오드 어레이의 열처리에 따른 전기적 특성 = Electrical characteristics on annealing effect for diode array used HgCdTe

다국어 초록 (Multilingual Abstract)

This paper is investigated on the study of uniformity improvement and electrical characteristics for the 1×128 diode array used Hg^0.7Cd^0.3Te. The electrical characteristics were measured for the device manufactured by several different annealing processes and temperatures being discrepant from existing method of annealing processes and temperatures. The results of uniformity were improved from 60∼80[%], the rate of existing uniformity, to 99[%].
The results obtained from analyzing and examining the characteristics of current-voltage(I-V) and capacitance-voltage(C-V) are following. First, the reverse current show 6[㎁] or so. It is seemed to be resulted from the decrease of direct tunneling and trap tunneling of the device. Second, when the input bias voltage is zero, the maximum value of reverse resistance show 12[GΩ], and the mean value of reverse resistance show 5[GΩ]. Third, it is shown that the voltage of the maximum value of resistance is shifted 0.1[V] to the reverse direction.