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Highly transparent Gallium doped ZnO (GZO) thin films with different ratios of Gallium were synthesized by sol-gel process and dip coating technique. Concentration of the used solutions for dip coating was 0.09 M. Morphological investigations were don...
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RISS 인기검색어
Sol-Gel Processed GZO Thin Film from Low Concentration Solution and Investigating GZO/Cs2CO3 Bilayer
한글로보기https://www.riss.kr/link?id=A105873707
-
저자
Saeid Salari (Amirkabir University of Technology) ; Mehdi Ahmadi (Vali-e-Asr University of Rafsanjan) ; Kavoos Mirabbaszadeh (Amirkabir University of Technology)
- 발행기관
- 학술지명
- 권호사항
-
발행연도
2014
-
작성언어
English
- 주제어
-
등재정보
KCI등재,SCIE,SCOPUS
-
자료형태
학술저널
-
수록면
13-20(8쪽)
-
KCI 피인용횟수
15
- DOI식별코드
- 제공처
- 소장기관
-
0
상세조회 -
0
다운로드
부가정보
다국어 초록 (Multilingual Abstract)
Highly transparent Gallium doped ZnO (GZO) thin films with different ratios of Gallium were synthesized by sol-gel process and dip coating technique. Concentration of the used solutions for dip coating was 0.09 M.
Morphological investigations were done on GZO thin films with 0, 0.5, 1 and 2 at. % gallium content. Influences of doping ratio and post-annealing temperature on optical and electrical properties of the films were also studied. It was found that the film prepared from the solution containing 2 at. % Ga had improved structural properties, less electrical resistivity and biggest optical transmittance. The thickness dependence of the band gap of 2 at.% GZO thin films was also examined. Effect of Cs2CO3 nanolayer and ZnO thin film deposited on 2 at.% GZO thin film was studied. SEM images exhibited island features on the surface of GZO/Cs2CO3 bilayer.
Morphological investigations were done on GZO thin films with 0, 0.5, 1 and 2 at. % gallium content. Influences of doping ratio and post-annealing temperature on optical and electrical properties of the films were also studied. It was found that the film prepared from the solution containing 2 at. % Ga had improved structural properties, less electrical resistivity and biggest optical transmittance. The thickness dependence of the band gap of 2 at.% GZO thin films was also examined. Effect of Cs2CO3 nanolayer and ZnO thin film deposited on 2 at.% GZO thin film was studied. SEM images exhibited island features on the surface of GZO/Cs2CO3 bilayer.
Highly transparent Gallium doped ZnO (GZO) thin films with different ratios of Gallium were synthesized by sol-gel process and dip coating technique. Concentration of the used solutions for dip coating was 0.09 M.
Morphological investigations were done on GZO thin films with 0, 0.5, 1 and 2 at. % gallium content. Influences of doping ratio and post-annealing temperature on optical and electrical properties of the films were also studied. It was found that the film prepared from the solution containing 2 at. % Ga had improved structural properties, less electrical resistivity and biggest optical transmittance. The thickness dependence of the band gap of 2 at.% GZO thin films was also examined. Effect of Cs2CO3 nanolayer and ZnO thin film deposited on 2 at.% GZO thin film was studied. SEM images exhibited island features on the surface of GZO/Cs2CO3 bilayer.
참고문헌 (Reference)
1 Q. -B. Ma, 58 : 21-, 2008
2 W. Tang, 238 : 83-, 1994
3 V. Assuncão, 442 : 102-, 2003
4 S. Fay, 86 : 385-, 2005
5 B. -Z. Dong, 101 : 033713-, 2007
6 S. Golshahi, 518 : 1149-, 2009
7 A. K. K. Kyaw, 93 : 221107-, 2008
8 H. M. Zhou, 515 : 6909-, 2007
9 H. -H. Liao, 92 : 173303-, 2008
10 D. -Y. Chung, 98 : 103306-, 2011
1 Q. -B. Ma, 58 : 21-, 2008
2 W. Tang, 238 : 83-, 1994
3 V. Assuncão, 442 : 102-, 2003
4 S. Fay, 86 : 385-, 2005
5 B. -Z. Dong, 101 : 033713-, 2007
6 S. Golshahi, 518 : 1149-, 2009
7 A. K. K. Kyaw, 93 : 221107-, 2008
8 H. M. Zhou, 515 : 6909-, 2007
9 H. -H. Liao, 92 : 173303-, 2008
10 D. -Y. Chung, 98 : 103306-, 2011
11 G. Jo, 97 : 213301-, 2010
12 S. B. Majumder, 103 : 16-, 2003
13 J. -H. Lee, 426 : 94-, 2003
14 J. H. Lee, 247 : 119-, 2003
15 R. Al Asmar, 83 : 393-, 2006
16 A. Liu, 198 : 494-, 2011
17 W. J. Park, 93 : 083508-, 2008
18 Y. W. Heo, 78 : 53-, 2004
19 M. Dutta, 254 : 2743-, 2008
20 L. Gao, 257 : 2498-, 2011
21 J. Yu, 379 : 7-, 2000
22 T. PrasadaRao, 506 : 788-, 2010
23 D. Zhu, 255 : 6145-, 2009
24 X. Xu, 32 : 685-, 2012
25 Y. Park, 538 : 20-, 2011
26 G. Cheng, 103 : 164-, 2012
27 R. G. Gordon, 25 : 52-, 2000
28 V. Bhosle, 100 : 093519-, 2006
29 T. Minami, 516 : 1314-, 2008
30 T. Hamaguchi, 65 : 51-, 2008
31 K. Ellmer, 34 : 3097-, 2001
32 J. Zhao, 253 : 841-, 2006
33 Yasemin Caglar, "Microstructural, optical and electrical studies on sol gel derived ZnO and ZnO:Al films" 한국물리학회 12 (12): 963-968, 2012
34 Chien-Yie Tsay, "Effect of dopants on the structural, optical and electrical properties of solegel derived ZnO semiconductor thin films" 한국물리학회 13 (13): 60-65, 2013
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분석정보
인용정보 인용지수 설명보기
학술지 이력
| 연월일 | 이력구분 | 이력상세 | 등재구분 |
|---|---|---|---|
| 학술지등록 | 한글명 : Electronic Materials Letters외국어명 : Electronic Materials Letters | ||
| 2023 | 평가예정 | 해외DB학술지평가 신청대상 (해외등재 학술지 평가) | |
| 2020-01-01 | 평가 | 등재학술지 유지 (해외등재 학술지 평가) | |
| 2013-10-01 | 평가 | 등재학술지 선정 (기타) | |
| 2011-01-01 | 평가 | 등재후보학술지 유지 (기타) |  |
| 2009-12-29 | 학회명변경 | 한글명 : 대한금속ㆍ재료학회 -> 대한금속·재료학회 | |
| 2008-01-01 | 평가 | SCIE 등재 (신규평가) | |
학술지 인용정보
| 기준연도 | WOS-KCI 통합IF(2년) | KCIF(2년) | KCIF(3년) |
|---|---|---|---|
| 2016 | 1.68 | 0.41 | 1.08 |
| KCIF(4년) | KCIF(5년) | 중심성지수(3년) | 즉시성지수 |
| 0.89 | 0.83 | 0.333 | 0.06 |
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