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      SCOPUS KCI등재

      실리콘 기판 표면 형상에 따른 반사특성 및 광 전류 개선 효과 = Effect of Surface Microstructure of Silicon Substrate on the Reflectance and Short-Circuit Current

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      https://www.riss.kr/link?id=A105149054

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      다국어 초록 (Multilingual Abstract)

      For fabricating silicon solar cells with high conversion efficiency, texturing is one of the most effective techniques to increase short circuit current by enhancing light trapping. In this study, four different types of textures, large V-groove, large U-groove, small V-groove, and small U-groove, were prepared by a wet etching process. Silicon substrates with V-grooves were fabricated by an anisotropic etching process using a KOH solution mixed with isopropyl alcohol (IPA), and the size of the V-grooves was controlled by varying the concentration of IPA. The isotropic etching process following anisotropic etching resulted in U-grooves and the isotropic etching time was determined to obtain U-grooves with an opening angle of approximately $60^{\circ}$. The results indicated that U-grooves had a larger diffuse reflectance than V-grooves and the reflectances of small grooves was slightly higher than those of large grooves depending on the size of the grooves. Then amorphous Si:H thin film solar cells were fabricated on textured substrates to investigate the light trapping effect of textures with different shapes and sizes. Among the textures fabricated in this work, the solar cells on the substrate with small U-grooves had the largest short circuit current, 19.20 mA/$cm^2$. External quantum efficiency data also demonstrated that the small, U-shape textures are more effective for light trapping than large, V-shape textures.
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      For fabricating silicon solar cells with high conversion efficiency, texturing is one of the most effective techniques to increase short circuit current by enhancing light trapping. In this study, four different types of textures, large V-groove, larg...

      For fabricating silicon solar cells with high conversion efficiency, texturing is one of the most effective techniques to increase short circuit current by enhancing light trapping. In this study, four different types of textures, large V-groove, large U-groove, small V-groove, and small U-groove, were prepared by a wet etching process. Silicon substrates with V-grooves were fabricated by an anisotropic etching process using a KOH solution mixed with isopropyl alcohol (IPA), and the size of the V-grooves was controlled by varying the concentration of IPA. The isotropic etching process following anisotropic etching resulted in U-grooves and the isotropic etching time was determined to obtain U-grooves with an opening angle of approximately $60^{\circ}$. The results indicated that U-grooves had a larger diffuse reflectance than V-grooves and the reflectances of small grooves was slightly higher than those of large grooves depending on the size of the grooves. Then amorphous Si:H thin film solar cells were fabricated on textured substrates to investigate the light trapping effect of textures with different shapes and sizes. Among the textures fabricated in this work, the solar cells on the substrate with small U-grooves had the largest short circuit current, 19.20 mA/$cm^2$. External quantum efficiency data also demonstrated that the small, U-shape textures are more effective for light trapping than large, V-shape textures.

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      참고문헌 (Reference)

      1 C. Leendertz, 7 : 1005-, 2010

      2 U. K. Das, 92 : 063504-, 2008

      3 S. K. Kim, 92 : 298-, 2008

      4 J. Ge, 15 : 107-, 2012

      5 T. Maruyama, 64 : 261-, 2000

      6 M. Edwards, 92 : 1373-, 2008

      7 I. Zubel, 171 : 436-, 2011

      8 I. Zubel, 101 : 255-, 2002

      9 D. Iencinella, 87 : 725-, 2005

      10 K. E. Bean, 25 : 1185-, 1978

      1 C. Leendertz, 7 : 1005-, 2010

      2 U. K. Das, 92 : 063504-, 2008

      3 S. K. Kim, 92 : 298-, 2008

      4 J. Ge, 15 : 107-, 2012

      5 T. Maruyama, 64 : 261-, 2000

      6 M. Edwards, 92 : 1373-, 2008

      7 I. Zubel, 171 : 436-, 2011

      8 I. Zubel, 101 : 255-, 2002

      9 D. Iencinella, 87 : 725-, 2005

      10 K. E. Bean, 25 : 1185-, 1978

      11 J. M. Kim, 81 : 239-, 2004

      12 L. Fesquet, 754-, 2009

      13 Y. Tsunomura, 93 : 670-, 2009

      14 T. Mueller, 683-, 2010

      15 M. G. Kang, 326 : 14-, 2011

      16 강민구, "실리콘 이종 접합 태양 전지 특성에 대한 ZnO:Al과 비정질 실리콘 계면 반응의 영향" 한국재료학회 21 (21): 120-124, 2011

      17 김영진, "실리콘 박막 태양전지 전면 전극용 ZnO : Al 투명전도막의 표면형상및 산란광 특성" 한국재료학회 19 (19): 245-252, 2009

      18 박하영, "산성 표면절삭결함 제거 공정에 의한 실리콘 태양전지의 텍스쳐링 효과 개선" 대한금속·재료학회 46 (46): 835-840, 2008

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2014-03-01 평가 SCOPUS 등재 (기타) KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2007-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2005-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2002-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      1999-07-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.15 0.15 0.14
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.14 0.13 0.255 0.03
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