<P>Elimination of charge trapping at defects is highly challenging for poly-crystalline organometal halide perovskites. Here, we report a new architecture for reinforcing the built-in electric field (<I>E</I>in) across the photoactiv...
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https://www.riss.kr/link?id=A107450432
2018
-
SCOPUS,SCIE
학술저널
1742-1751(10쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Elimination of charge trapping at defects is highly challenging for poly-crystalline organometal halide perovskites. Here, we report a new architecture for reinforcing the built-in electric field (<I>E</I>in) across the photoactiv...
<P>Elimination of charge trapping at defects is highly challenging for poly-crystalline organometal halide perovskites. Here, we report a new architecture for reinforcing the built-in electric field (<I>E</I>in) across the photoactive layer with a pair of strong electric dipole layers (EDLs). The paired EDLs significantly intensify the <I>E</I>in across the perovskite layer, resulting in suppressed charge trapping of photogenerated charges. As a result, our low-temperature processed P-I-N planar PeSC devices using the paired EDLs exhibit a higher power conversion efficiency (<I>η</I>max ∼ 19.4%) and a smaller device-to-device variation with a standard deviation (S.D.) of 0.70%, which far surpass those (<I>η</I>max ∼ 17.8%, S.D. ∼ 1.1%) of the devices with typical charge transport layers.</P>