RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      고속 열처리 시스템에서 웨이퍼 상의 다중점 계측에 의한 온도 분포 추정 기법 연구 = A Prediction Method of Temperature Distribution on the Wafer in a Rapid Thermal Process System with Multipoint Sensing

      한글로보기

      https://www.riss.kr/link?id=A105636965

      • 0

        상세조회
      • 0

        다운로드
      서지정보 열기
      • 내보내기
      • 내책장담기
      • 공유하기
      • 오류접수

      부가정보

      다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

      The uniformity of temperature on a wafer is one of the most important parameters to control the RTP (Rapid Thermal Process) with proper input signals. Since it is impossible to achieve the uniformity of temperature without exact estimation of temperature at all points on the wafer, the difficulty of understanding internal dynamics and structural complexities of the RTP is a primary obstacle to accurately measure the distributed temperatures on the wafer. Furthermore, it is also hard to accomplish desirable estimation because only few pyrometers have been commonly available in the general equipments. In the paper, a thermal model based on the chamber geometry of the AST SHS200 RTP system is developed to effectively control the thermal uniformity on the wafer. First of all, the estimation method of one-point measurement is developed, which is properly extended to the case of multi-point measurements. This thermal model is validated through certain simulation and experiments. The work can be usefully contributed to building a run-by-run or a real-time controls of the RTP.
      번역하기

      The uniformity of temperature on a wafer is one of the most important parameters to control the RTP (Rapid Thermal Process) with proper input signals. Since it is impossible to achieve the uniformity of temperature without exact estimation of temperat...

      The uniformity of temperature on a wafer is one of the most important parameters to control the RTP (Rapid Thermal Process) with proper input signals. Since it is impossible to achieve the uniformity of temperature without exact estimation of temperature at all points on the wafer, the difficulty of understanding internal dynamics and structural complexities of the RTP is a primary obstacle to accurately measure the distributed temperatures on the wafer. Furthermore, it is also hard to accomplish desirable estimation because only few pyrometers have been commonly available in the general equipments. In the paper, a thermal model based on the chamber geometry of the AST SHS200 RTP system is developed to effectively control the thermal uniformity on the wafer. First of all, the estimation method of one-point measurement is developed, which is properly extended to the case of multi-point measurements. This thermal model is validated through certain simulation and experiments. The work can be usefully contributed to building a run-by-run or a real-time controls of the RTP.

      더보기

      동일학술지(권/호) 다른 논문

      동일학술지 더보기

      더보기

      분석정보

      View

      상세정보조회

      0

      Usage

      원문다운로드

      0

      대출신청

      0

      복사신청

      0

      EDDS신청

      0

      동일 주제 내 활용도 TOP

      더보기

      주제

      연도별 연구동향

      연도별 활용동향

      연관논문

      연구자 네트워크맵

      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

      이 자료와 함께 이용한 RISS 자료

      나만을 위한 추천자료

      해외이동버튼