Growth of and Oxygen-Flow In uence on ZnO Layers Grown by Using RF Magnetron Sputtering

다국어 초록 (Multilingual Abstract)

Epitaxial ZnO layers were grown on Al2O3 substrates by using the RF magnetron sputtering method. The structural and the optical properties were investigated as the O2 pressure was in-creased. When O2 pressure was controlled, ZnO layers were strongly oriented along the c-axis of the hexagonal structure and their biaxial stress was nearly strain free. From the transmittance mea-surements, the ZnO layers showed an average transmittance of over 90 % and the absorption edge shifted toward the short-wavelength region with increasing O2 flow. From the photoluminescence
measurements, the intensities of the near-band-edge and of the red emission increased and decreased with increasing O2 pressure, respectively. As the O2 pressure was increased, the oxygen-vacancy reduction in the ZnO layers is thought to be responsible for the improvement in the crystal's quality. However, there wasn't any continued crystal-quality improvement at over
ow O2 pressure.

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