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KISS
Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientat...
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RISS 인기검색어
SrRuO<sub>3</sub> 전극 박막 위에 증착된 PZT 박막의 구조 및 강유전 특성 = Structural and Ferroelectric Properties of PZT Thin Films Deposited on SrRuO<sub>3</sub> Electrode Films
한글로보기https://www.riss.kr/link?id=A102414389
- 저자
- 발행기관
- 학술지명
- 권호사항
-
발행연도
2016
-
작성언어
Korean
- 주제어
-
등재정보
KCI등재
-
자료형태
학술저널
-
수록면
620-624(5쪽)
- DOI식별코드
- 제공처
- 소장기관
-
0
상세조회 -
0
다운로드
부가정보
다국어 초록 (Multilingual Abstract)
Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.
Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.
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