고출력 다중모드 반도체 레이저에 대한 단일 주파수 주입을 통한 잠금 = Injection locking of a high power broad-area diode laser to a single frequency diode laser

다국어 초록 (Multilingual Abstract)

Because there is always interest in low-cost, reliable light sources displaying desirablespatial and spectral properties, optical injection has been widely used to explore the locking of low power, single-frequency diode laser beam into single stripe, broad area, high-power lasers. We are trying several new ideas, although there have been some previous studies. When we inject 30mW of 794nm light from a Sacher external cavity diode laser (master) into a Coherent S-79-1200C-100-Q (slave), the output changes dramatically from multimode to single mode up to a slave laser output power over 460mW. This maximum single mode power tracks the injected master laser power. The output frequency follows the master``s frequency. This light can be used to excite the Helium 33P2 state to the Rydberg states.