50 nm 이상의 CMOS 기술에 이용되는 Spin-on Dielectric 박막 형성과 그 특성에 미치는 전구체의 영향 = The Effects of Precursor on the Formation and Their Properties of Spin-on Dielectric Films Used for Sub-50 nm Technology and Beyond

다국어 초록 (Multilingual Abstract)

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

참고문헌 (Reference)

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