A study on the preparation of organic-inorganic metal oxide hybrid nanoparticles and their application as high-k gate dielectrics in OTFT devices = A study on the preparation of organic-inorganic metal oxide hybrid nanoparticles and their application as high-k gate dielectrics in OTFT devices

목차 (Table of Contents)

• Table of Contents
• GENERAL INTRODUCTION 1
• Chapter 1: Introduction to organic thin−film transistors (OTFTs) and gate dielectric as crucial component of an OTFT. 6
• 1. Organic thin−film transistors (OTFTs) 6
• 1.1. Evolution of Organic TFTs 6
• 1.2. Device Structure and Configuration 8
• 1.3. Working principles of OTFTs 10
• 1.4. Characteristics of OTFTs 11
• 2. Gate dielectric 14
• 3. Classification of dielectric materials 18
• 3.1. Inorganic high− k dielectrics 18
• 3.2. Polymer high− k dielectrics 21
• 3.3. Nanocomposite high−k dielectrics 24
• Chapter II: Preparation of colloidally stable organic-inorganic hybrid nanoparticles via sol-gel process and the effect of solvent types on the degree of condensation during the process. 27
• 2.1 Overview 27
• 2.2 Materials and Methods 28
• 2.2.1 Materials 28
• 2.2.2 Synthesis of UAN 1000−1450 29
• 2.2.3 Preparation of SiO2 organic−inorganic hybrid sols 30
• 2.2.4. Preparation of O−I SiO2 hybrid coating films on glass substrate 33
• 2.2.5. Characterization 33
• 2.3. Results and Discussion 34
• 2.3.1. Effect of the Solvent Type on the Colloidal Property of Silica Sols 34
• 2.3.2. Effect of solvent type on the reaction in the preparation of silica sols 41
• 2.4 Conclusions 55
• Chapter III: Preparation of solution−processed organic−inorganic SiO2 hybrid nanoparticles using as high−k gate dielectric material applied in OTFT. 56
• 3.1 Introduction 56
• 3.2 Experiment part 58
• 3.2.1 Materials 58
• 3.2.2 Synthesis of AUP 1000−m550 58
• 3.2.3 Preparation of organic−inorganic SiO2 hybrid nanoparticles 60
• 3.2.4 Fabrication of Metal–Insulator–Metal (MIM) device 63
• 3.2.5 Fabrication of OTFT device 63
• 3.2.6 Characterization 63
• 3.3. Results and Discussion 64
• 3.3.1 Role of AUP 1000−m550 in the preparation of O−I SiO2 hybrid nanoparticles 64
• 3.3.2 Formation of O−I SiO2 hybrid nanoparticles 67
• 3.3.3 Formation of O-I SiO2 hybrid coatings and their electrical properties 71
• 3.3.4 OTFT performance 82
• 3.4 Conclusion 85
• Chapter 4: Preparation of low-temperature solution-processed high-k gate dielectric using organic-inorganic TiO2 hybrid nanoparticles. 86
• 4.1 Introduction 86
• 4.2 Materials and Methods 89
• 4.2.1 Materials 89
• 4.2.2 Synthesis of AUPs 89
• 4.2.3 Preparation of O-I TiO2 hybrid nanoparticles 90
• 4.2.4 Preparation of TiO2/poly(AUP) nanocomposites 90
• 4.2.5 Sample preparation (Dielectric deposition and device fabrication) 91
• 4.2.6 Characterization 92
• 4.3 Results and discussion 92
• 4.3.1 Characterization of AUPs 92
• 4.3.2 Preparation of colloidal stable O-I TiO2 hybrid sols 96
• 4.3.3 Characterization of O-I hybrid TiO2 coating films 100
• 4.3.4 Electrical characterization of O-I hybrid titania coatings and nanocomposite coatings 103
• 4.3.5 Effect of AUPs on the dielectric properties of O-I hybrid coatings 107
• 4.3.6 OTFT device performance 110
• 4.4 Conclusions 112
• Conclusion and future work 114
• References 115