<P><B>Abstract</B></P> <P>Open defects in power pins can only be diagnosed indirectly, and these diagnoses are a challenging task in failure analysis due to the failure signature's aliasing to other issues. Open defects ...
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https://www.riss.kr/link?id=A107710408
2018
-
SCOPUS,SCIE
학술저널
277-281(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P> <P>Open defects in power pins can only be diagnosed indirectly, and these diagnoses are a challenging task in failure analysis due to the failure signature's aliasing to other issues. Open defects ...
<P><B>Abstract</B></P> <P>Open defects in power pins can only be diagnosed indirectly, and these diagnoses are a challenging task in failure analysis due to the failure signature's aliasing to other issues. Open defects cannot be detected by traditional DC-type test methods and can remain a potential risk in stressful device operation. In this work, error signatures in power open faults are experimentally probed to better understand electrical signatures induced by power-open. The power open faults are intentionally injected into a DDR3 SDRAM test platform. The power network inside the DDR3 SDRAM is experimentally found to be asymmetrical. Power-open defects in one power pin produce a range of power noise (0–65 mV), depending on the location of the power pin.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Power open faults are intentionally injected into customized DDR3 SDRAM test platform. </LI> <LI> Error signatures in power open faults are experimentally probed. </LI> <LI> The power network inside the DDR3 SDRAM is experimentally found to be asymmetrical. </LI> <LI> Power-open defects of one power ball increased power noise for a DDR3 component. </LI> </UL> </P>
Analysis of semiconductor fault using DS (damped sinusoidal) HPEM injection