2차원 이종접합 소자 시뮬레이터:HEDS = Two Dimensional Heterojunction Device Simulator:HEDS

다국어 초록 (Multilingual Abstract)

Two Dimensional Hterojunction Device Simulator(HEDS) has been made in order to analyze the various physical phenomena and the structural effects which are frequently occured in heterojunction semiconductor devides. In HEDS Poisson equation and Drift-Diffusion current equation as well as current continuity equation were discretized by the finite difference method, and the matrix was calculated by Powell Hybrid method. Especially, the effects of interface and surface and bulk recombination centers were considered, and the grid points were easily defined with the graphic function making the users identify the suitability of the grid distribution. And the grid points were selected to be uniform or parabolic distribution by the users. The material parameters of alloy semiconductors which could be made of the binary such as GaAs, AlAs and InAs were estimated and the other materials which the users want to use could be easily inserted into the program. In order to prove the performance of HEDS, it was applied to AlGaAs/GaAs HBT and the results of the single and double heterojunction HBTs were compared. In future the functions of HEDS will be improved by including the quantum mechanical effects such as the tunneling and the reflection at heterojunction and the thermal effects, which will be selected by the choice of users.