<P>Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates....
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https://www.riss.kr/link?id=A107503274
2016
-
SCOPUS,SCIE
학술저널
7598-7603(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates....
<P>Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high I-ON/IOFF ratio of similar to 10(5). The device also showed stable retention time over 5 X 10(5) s, outstanding cell-to-cell uniformity, and bending endurance over 10(3) cycles when maximum bending conditions.</P>
Directed Self-Assembly of Block Copolymer Thin Films Using Minimal Topographic Patterns
Davydov Splitting and Excitonic Resonance Effects in Raman Spectra of Few-Layer MoSe2
Electrical Transport Properties of Polymorphic MoS2