Effects of CH₄ Gas and Substrate Temperature on Hydrogenated Amorphous Carbon (a-C:H) Films Fabricated Using DC Facing Target Sputtering

다국어 초록 (Multilingual Abstract)

Hydrogenated amorphous carbon (a-C:H) films were deposited on soda-lime glass substrates by using a DC facing target sputtering system. The effects of the CH₄ gas and the substrate temperature on the deposition rate and the properties of the film were investigated. We found that the deposition rate of the film grown under an Ar-CH₄ plasma was about three times larger than that of the film grown under an Ar plasma. The CH₄ gas played a role as an additional carbon precursor to increase the deposition rate, which could be seen as a CH^* peak at 431 nm in the optical emission spectra of the Ar-CH₄ plasma. The <i>sp</i>³ fraction in the film increased gradually from 32 to 37% as the substrate temperature was increased from 100 ℃ to 400 ℃. The optical band-gap energy of the a-C:H films varied from 3.9 to 3.98 eV, and this variation was closely related to changes in the sp³ fraction. Overall, these results indicate that the addition of CH₄ gas to a-C:H film deposition enhanced the deposition rate by changing the deposition mechanism from physical to reactive.

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