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The growth conditions have been studied for InGaAsP LPE layers grown on (100) InP substrates using the two-phase melt technique. It has been found that the melt-compositions to obtain the 1.1 ㎛ InGaAsP lattice-matched to InP are X_Ga = 0.00417 and X...
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RISS 인기검색어
부가정보
다국어 초록 (Multilingual Abstract)
The growth conditions have been studied for InGaAsP LPE layers grown on (100) InP substrates using the two-phase melt technique. It has been found that the melt-compositions to obtain the 1.1 ㎛ InGaAsP lattice-matched to InP are X_Ga = 0.00417 and X_As = 0.032 when the growth temperature is 630℃ and the cooling rate 0.5℃/min. In this case, the solid-compositions x and y are 0.9 and 0.23, respectively. Also the influences of variations of the Ga and As atomic fraction in the liquid, X_Ga^L and X_As^L on the bandgap energies and the lattice constants have been investigated. The surface morphology and the growth thickness of InGaAsP LPE layers have also been studied.
The growth conditions have been studied for InGaAsP LPE layers grown on (100) InP substrates using the two-phase melt technique. It has been found that the melt-compositions to obtain the 1.1 ㎛ InGaAsP lattice-matched to InP are X_Ga = 0.00417 and X_As = 0.032 when the growth temperature is 630℃ and the cooling rate 0.5℃/min. In this case, the solid-compositions x and y are 0.9 and 0.23, respectively. Also the influences of variations of the Ga and As atomic fraction in the liquid, X_Ga^L and X_As^L on the bandgap energies and the lattice constants have been investigated. The surface morphology and the growth thickness of InGaAsP LPE layers have also been studied.
목차 (Table of Contents)
- Ⅰ. 서론
- Ⅱ. LPE 장치 및 실험
- 1. LPE 성장법
- 2. LPE 장치
- 3. LPE 성장
- Ⅰ. 서론
- Ⅱ. LPE 장치 및 실험
- 1. LPE 성장법
- 2. LPE 장치
- 3. LPE 성장
- Ⅲ. 결과 및 논의
- 1. 격자상수 및 bandgap에너지 측정
- 2. 성장층의 두께측정 및 표면 morphology 관찰
- 3. 투과전자현미경(TEM)을 이용한 계면결함 관찰
- Ⅳ. 결론
동일학술지(권/호) 다른 논문
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