비정질 n형 Si 박막을 이용한 자기터널링 트랜지스터 제작과 특성 = Fabrication and Characteristics of Magnetic Tunneling Transistors using the Amorphous n-Type Si Films

다국어 초록 (Multilingual Abstract)

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

참고문헌 (Reference)

1 "절연막층의 플라즈마 산화시간에 따른 CoFe/AlO/CoFe/NiFe 구조의 터널자기저항 효과 연구" 15 (15): 373-, 2002.

2 "거대 자기저항 소자와 터널 자기저항 소자의 원리와 응용" 14 (14): 3-, 2001.

3 "Spin-valve transistor with an Fe/Au/Fe" 79 : 1157-, 2001.

4 "Spin-dependent hot electron trans- port in NiFe and CoFe films on GaAs" 66 : 94417-, 2002.

5 "Semiconductor Sensors" 249-, 1994.

6 "Room temperature operation of a high output current magnetic tunnel tran- sistor" 80 (80): 3364-, 2002.

7 "Relative magneto-current of magnetic tunnel transistors with amorphous n-type Si film" 9 (9): 23-, 2004.

8 "Perpendicular hot electron spin-valve effect in a new mag- netic field sensor" 74 : 5260-, 1995.

9 "Nonmonotonic bias voltage depen- dence of the magnetocurrent in GaAs-based magnetic tunnel transistors" 90 (90): 197203-, 2003.

10 "Materials Science of Thin Films" Academic Press p.357.2002.

11 "Fabrication and charac- teristics of magnetic tunnel transistors using the amorphous n-type Si Film" 241 : 1498-, 2004.

12 "Fabrication and charac- teristics of magnetic tunnel transistors using the amorphous n-type Si Film" 241 : 1498-, 2004.

13 "Effect of Zr concentration on the micro- structure of Al and the magnetoresistance properties of the magnetic tunnel junction with a Zr-alloyed AlO oxide barrier" 83 (83): 317-, 2003.

14 "Comparison of magnetocurrent and transfer ratio in magnetic tunnel transistors with spin-valve bases containing Cu and Au spacer layers" 82 (82): 775-, 2003.

15 "CMOS 공정에 의한 suppressed sidewell injection mag- netotransistor의 특성" 17 (17): 1029-, 2004.

16 "Applications of magnetic nanostructures" Taylor & Francis Inc Advanced in Condensed Matter Science (3) : 237-, 2002.