졸-겔법에 의한 ITiO(Indium Titanium Oxide) 입자의 합성과 ITiO 박막의 광투과도 조사 = Synthesis of ITiO(Indium Titanium Oxide) particle by sol-gel and investigation on light transmittance of deposited ITiO thin film

국문 초록 (Abstract)

본 연구에서는 0.5, 1.0, 1.5 wt%의 TiO2를 함유하는 인듐-티타늄 수산화물을 졸 및 염기 첨가에 의해 얻었고, 200oC와 500oC에서 겔화 과정을 통해 ITiO(Indium Titanate Oxide)를 얻었다. 200oC에서 겔화 과정 후 얻어지는 ITiO 입자가 작아서 조밀성이 있는 ITiO 타겟을 제조하였다. 0.5, 1.0, 1.5 wt%의 TiO2를 함유하는 ITiO 타겟을 스퍼터링하여 ITiO 박막을 유리판위에 제작하여 비저항, 전하 이동도, 캐리어 농도를 조사하였다. 이들 박막 중에서 산소 조성이 0.4 %인 조건에서 0.5 wt% 중량% TiO2를 함유하는 ITiO 타겟으로부터 제작된 ITiO 박막이 가장 낮은 비저항, 가장 큰 전하이동도 및 가장 낮은 캐리어 농도를 보임을 알 수 있었고, 얻어진 ITiO 박막의 광투과율을 측정하여 적외선 영역에서 광투과율이 ITO(Indium Tin Oxide) 박막에 비해 현저히 증가함을 발견하였다.

다국어 초록 (Multilingual Abstract)

In this study, Indium-Titanium hydroxide particle with 0.5, 1.0, 1.5 wt% of TiO2 were synthesized by sol process and adding the base, ITiO(Indium Titanium Oxide) particles were obtained by gelling at 200 oC and 500oC. The ITiO particle's size with gel process at 200oC was smaller than ITiO particle's size with gel process 500oC. The ITiO particle with gel process at 200oC was used to fabricate dense ITiO target. ITiO targets with 0.5, 1.0, 1.5 wt% of TiO2 were fabricated and used to obtain ITiO thin films onto glass by sputtering. Among those sputtered ITiOs' thin films, ITiO thin film with 0.4 % of O2 and 0.5 wt% of TiO2 showed the lowest specific resistance, highest charge mobility and lowest carrier concentration. It was found the light transmittance of the ITiO film were increased highly compared to light transmittance of ITO(Indium Tin Oxide) thin film over Infrared wavelength ranges

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