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RISSThe un-doped Bi_4Ti_3O_12(BIT)and W-doped Bi_4Ti_3O_12(BTW) thin films were prepared on Pt(111)/Ti/Sio_2/Si(100) substrates by a sol-gel process amd spin caoting method. The films were analyzed by X-ray diffraction(XRD)and scanning electron microscop...
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RISS 인기검색어
텅스텐(W)을 첨가한 Bi_4Ti_3O_1_2 (BTW) 박막의 미세구조 및 강유전 특성 변화 = Variations of microstructure and ferroelectric properties of tungsten-doped Bi_4Ti_3O_1_2 (BTW) thin film
한글로보기https://www.riss.kr/link?id=A30035636
- 저자
- 발행기관
- 학술지명
- 권호사항
-
발행연도
2002
-
작성언어
Korean
-
KDC
405.000
-
자료형태
학술저널
-
수록면
1-10(10쪽)
- 제공처
-
0
상세조회 -
0
다운로드
부가정보
다국어 초록 (Multilingual Abstract)
The un-doped Bi_4Ti_3O_12(BIT)and W-doped Bi_4Ti_3O_12(BTW) thin films were prepared on Pt(111)/Ti/Sio_2/Si(100) substrates by a sol-gel process amd spin caoting method.
The films were analyzed by X-ray diffraction(XRD)and scanning electron microscopy(SEM).
The ferroelectric hysteresis loops and the fatigue properties were obtained using a RT66A
ferroelectric tester.X-ray diffraction measurements showed layered perovskite structures with a single phase in both films.
The remanent polarization(2 P_r)and the coercive field(2 E_c)fo the BTW thin film were 16 u C/㎠ and 115 ㎸/㎝,respectively, with a applied field of 170 ㎸/㎝.
In addition,the BTW thin film showed a low fatigue behavior up to 4.5×10^10 read/write cycles.The dielectric constant was measured 400 at 10 ㎑.
The films were analyzed by X-ray diffraction(XRD)and scanning electron microscopy(SEM).
The ferroelectric hysteresis loops and the fatigue properties were obtained using a RT66A
ferroelectric tester.X-ray diffraction measurements showed layered perovskite structures with a single phase in both films.
The remanent polarization(2 P_r)and the coercive field(2 E_c)fo the BTW thin film were 16 u C/㎠ and 115 ㎸/㎝,respectively, with a applied field of 170 ㎸/㎝.
In addition,the BTW thin film showed a low fatigue behavior up to 4.5×10^10 read/write cycles.The dielectric constant was measured 400 at 10 ㎑.
The un-doped Bi_4Ti_3O_12(BIT)and W-doped Bi_4Ti_3O_12(BTW) thin films were prepared on Pt(111)/Ti/Sio_2/Si(100) substrates by a sol-gel process amd spin caoting method.
The films were analyzed by X-ray diffraction(XRD)and scanning electron microscopy(SEM).
The ferroelectric hysteresis loops and the fatigue properties were obtained using a RT66A
ferroelectric tester.X-ray diffraction measurements showed layered perovskite structures with a single phase in both films.
The remanent polarization(2 P_r)and the coercive field(2 E_c)fo the BTW thin film were 16 u C/㎠ and 115 ㎸/㎝,respectively, with a applied field of 170 ㎸/㎝.
In addition,the BTW thin film showed a low fatigue behavior up to 4.5×10^10 read/write cycles.The dielectric constant was measured 400 at 10 ㎑.
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