The electronic structures of Sn and Pb implanted SiO<SUB>2</SUB> are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of Pb?O and Sn...
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https://www.riss.kr/link?id=A107660255
2012
-
SCI,SCIE,SCOPUS
학술저널
3187-3192(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
The electronic structures of Sn and Pb implanted SiO<SUB>2</SUB> are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of Pb?O and Sn...
The electronic structures of Sn and Pb implanted SiO<SUB>2</SUB> are studied using soft X-ray absorption (XAS) and emission (XES) spectroscopy. We show, using reference compounds and ab initio calculations, that the presence of Pb?O and Sn?O interactions can be detected in the pre-edge region of the oxygen K-edge XAS. Via analysis of this interaction-sensitive pre-edge region, we find that Pb implantation results primarily in the clustering of Pb atoms. Conversely, with Sn implantation using identical conditions, strong Sn?O interactions are present, showing that Sn is coordinated with oxygen. The varying results between the two ion types are explained using both ballistic considerations and density functional theory calculations. We find that the substitution of Pb into Si sites in SiO<SUB>2</SUB> requires much more energy than substituting Sn in these same sites, primarily due to the larger size of the Pb ions. From these calculated formation energies it is evident that Pb requires far higher temperatures than Sn to be soluble in SiO<SUB>2</SUB>. These results help explain the complex processes which take place upon implantation and determine the final products.