Modifications of structural, optical and electrical properties of nanocrystalline bismuth sulphide by using swift heavy ions

다국어 초록 (Multilingual Abstract)

Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered
separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠
fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films.
In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity
and increase in thermoemf of the films. These results were explained in the light of thermal spike model.

다국어 초록 (Multilingual Abstract)

Modified chemical bath deposited (MCBD) bismuth sulphide (Bi2S3) thin films’ structural, optical and electrical properties are engineered
separately by annealing in air for 1 h at 300 ℃ and irradiating with 100 MeV Au swift heavy ions (SHI) at 5 × 1012 ions/㎠
fluence. It is observed that the band gap of the films gets red shifted after annealing and irradiation from pristine (as deposited) films.
In addition, there is an increase in the grain size of the films due to both annealing and irradiation, leading to the decrease in resistivity
and increase in thermoemf of the films. These results were explained in the light of thermal spike model.

참고문헌 (Reference)

1 S.K. Srivastava, 17 : 2518-, 2006

2 Akram I. Boukai, 451 : 168-, 2007

3 A.A. Ezhevskii, 257 : 68-, 2007

4 D. Fink, 160 : 67-, 2005

5 X. Liao, 36 : 2339-, 2001

6 G. Shen, 370 : 334-, 2003

7 Z. Liu, 178 : 950-, 2005

8 R.S. Mane, 60 : 196-, 1999

9 S.R. Gadakh, 64 : 5-, 2000

10 R.R. Ahire, Proceedings of ICRTNT 44-, 2006

11 Abhay A. Sagade, 162 : 77-, 2007

12 R.R. Ahire, 40 : 4850-, 2007

13 D.Pramanik, 244 : 74-, 2006

14 A.E. Volkov, 193 : 381-, 2002

15 G. Shiwiets, 146 : 131-, 1998

16 A.I. Ryazanov, 51 : 12107-, 1995

17 M. Toulemonde, 46 : 14362-, 1992

18 D.E. Alexander, 47 : 2983-, 1993

19 43 : 1471-,

20 J.P. Singh, 90 : 5968-, 2001

21 E.A. Eklund, 285 : 1571-, 1993

22 M.S. Kamboj, 35 : 477-, 2002

23 S. Chowdhury, 79 : 1019-, 2005

24 B.R. Sankapal, 74 : 126-, 2002

25 H.M. Pathan, 218 : 290-, 2003

26 F. Seitz, 2 : 305-, 1956

27 M. Toulemonde, 46 : 14362-, 1992

28 Wang, 6 : 6733-, 1994

29 S.K. Srivastava, 17 : 2518-, 2006

30 D. Leusueur, 126 : 163-, 1993

31 A.I. Ryazanov, 157 : 179-, 2002

32 K. Izui, 20 : 945-, 1965

33 "http://srim.org"

34 D.K. Suri, "University of Delhi" University of Delhi 1991

35 V.F. Nesterenko, "Shock Waves and High Strain Rate Phenomena in Metals" Plenum Press 1981

36 R.L. Fleischer, "Nuclear Tracks in Solids: Principles and Applications" University of California Press 1975

37 Nishad G. Deshpande, "Modifications in physical, optical and electrical properties of tin oxide by swift heavy Au8+ ion bombardment" 한국물리학회 8 (8): 181-188, 2008