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The Characteristics of the Semi-Diagonal MOSFETs for 64 mb DRAMS

한글로보기

https://www.riss.kr/link?id=A3363742

저자

Kim, Cheon Soo (Memory Device Div., Eectronics & Telecommunication Resarch Institute) ; Lee, Jin Ho (Memory Device Div., Eectronics & Telecommunication Resarch Institute) ; Youn, Chang Joo (Memory Device Div., Eectronics & Telecommunication Resarch Institute) ; Kim, Dae Yong (Memory Device Div., Eectronics & Telecommunication Resarch Institute) ; Lee, Jin Hyo (Memory Device Div., Eectronics & Telecommunication Resarch Institute)
발행기관
대한전자공학회(The Korean Institute of Telematics and Electronics)
학술지명
ICVC : International Conference on VLSI and CAD
권호사항

Vol.2 No.1 [1991]
발행연도
1991
작성언어
English
KDC
569.000
자료형태
학술저널
발행기관 URL
http://www.ieek.or.kr
수록면

7-10(4쪽)
제공처
DBpia

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다국어 초록 (Multilingual Abstract)

A systematic study has been carried out on MOS FETs whose channel region geometry designed diagonally or semi-diagonally according to the cross position and angle between active region and gate electrode are fabricated. Their electrical characteristics and hot carrier reliability are measured and then com paired with those of conventional device. Better hot carrier reliability and reduced device performance (Gm, ID, etc.) are; obtained using this device structure, compared to those of conventional device. For this reasons, the design guide-line of semi-diagonal and diagonal device will be discussed.

번역하기

A systematic study has been carried out on MOS FETs whose channel region geometry designed diagonally or semi-diagonally according to the cross position and angle between active region and gate electrode are fabricated. Their electrical characteristic...

A systematic study has been carried out on MOS FETs whose channel region geometry designed diagonally or semi-diagonally according to the cross position and angle between active region and gate electrode are fabricated. Their electrical characteristics and hot carrier reliability are measured and then com paired with those of conventional device. Better hot carrier reliability and reduced device performance (Gm, ID, etc.) are; obtained using this device structure, compared to those of conventional device. For this reasons, the design guide-line of semi-diagonal and diagonal device will be discussed.