A multibit DRAM test ng methodologies capable of counting and locating of defect cells simultaneously. which reduces redundancy programming overhead has been proposed. If DRAM cells are composed of n blocks generally, the proposed testing methodology ...
A multibit DRAM test ng methodologies capable of counting and locating of defect cells simultaneously. which reduces redundancy programming overhead has been proposed. If DRAM cells are composed of n blocks generally, the proposed testing methodology can detect the state of no error, the location of defect cells if there is one error in a block, the state of errors in two or more blocks, which are n + 2 states totally, with n comparators and an encoder for 3 states. Based on the proposed methodology, the testing scheme which can detect the number and locations of defect cells with the errors in two or more blocks, can be easily implemented.